LaNiO3 as contact material for (Ba,Sr)TiO3 dielectric thin films

Anuranjan Srivastava, D. Kumar, Rajiv K. Singh

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

LaNiO3 (LNO) films were used as conductive bottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3 (BST) capacitors on silicon substrates. LNO as well as BST films were grown in situ using a pulsed laser deposition technique with no subsequent heating or oxygenation treatments. Capacitance and leakage current measurements of BST films were carried out using LNO/BST/LNO/Si structures. Using these measurements, the dielectric constant and leakage current of BST films were approx. 250 and approx. 10-8 A/cm2, respectively. The results obtained in the present study suggest that LNO is a good contact electrode material for BST films in the fabrication of BST capacitors with good structural and electrical properties.

Original languageEnglish
Pages (from-to)294-296
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number6
DOIs
StatePublished - Jun 1999
Externally publishedYes

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