Abstract
It is demonstrated that the temperature dependence of the conductivity of degenerate n- and p-type germanium observed near helium temperatures is due to the Kondo effect. A model is suggested to explain the negative magnetoresistance of n-type Ge and the ″anomalous″ positive magnetoresistance of p-type Ge on the basis of magnetic-field-induced changes in the density of states near the Fermi level.
| Original language | English |
|---|---|
| Pages (from-to) | 433-436 |
| Number of pages | 4 |
| Journal | Semiconductors |
| Volume | 11 |
| Issue number | 4 |
| State | Published - 1977 |