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Knocking down highly-ordered large-scale nanowire arrays

  • Alexander Pevzner
  • , Yoni Engel
  • , Roey Elnathan
  • , Tamir Ducobni
  • , Moshit Ben-Ishai
  • , Koteeswara Reddy
  • , Nava Shpaisman
  • , Alexander Tsukernik
  • , Mark Oksman
  • , Fernando Patolsky
  • Tel Aviv University

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm2.

Original languageEnglish
Pages (from-to)1202-1208
Number of pages7
JournalNano Letters
Volume10
Issue number4
DOIs
StatePublished - 14 Apr 2010
Externally publishedYes

Keywords

  • Arrays
  • Electrical devices
  • Field effect transistors
  • Nanowire

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