Abstract
The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm2.
| Original language | English |
|---|---|
| Pages (from-to) | 1202-1208 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 10 |
| Issue number | 4 |
| DOIs | |
| State | Published - 14 Apr 2010 |
| Externally published | Yes |
Keywords
- Arrays
- Electrical devices
- Field effect transistors
- Nanowire
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