Abstract
We study the question of whether the metal-insulator transition in a doped semiconductor takes place in a conduction band or in an impurity band. Our calculations of the Knight shift and the specific heat indicate that the transition takes place in an impurity band. We use a tight-binding model to calculate the electron wavefunctions and density of states and obtain good agreement with the measured Knight shift and specific heat of Si:P. By contrast, the nearly-free- electron model, appropriate to a conduction band, fails to account for the Knight shift measured at the phosphorus nuclei in Si: P.
| Original language | English |
|---|---|
| Pages (from-to) | 247-254 |
| Number of pages | 8 |
| Journal | Philosophical Magazine Letters |
| Volume | 58 |
| Issue number | 5 |
| DOIs | |
| State | Published - Nov 1988 |
Bibliographical note
Funding Information:We are grateful to Professor Sir Nevi11 Mott for discussions on this topic. This research was supported by the fund for basic research administration by the Israel Academy of Sciences and Humanities.
Funding
We are grateful to Professor Sir Nevi11 Mott for discussions on this topic. This research was supported by the fund for basic research administration by the Israel Academy of Sciences and Humanities.
| Funders | Funder number |
|---|---|
| Israel Academy of Sciences and Humanities |