Kinetics of photoinduced surface patterning in chalcogenide thin films

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Abstract

The kinetics of photoinduced variations in surface profile in chalcogenide glass films under illumination is described. It is demonstrated that the competition between the stress-induced atomic flux (toward irradiated regions of the film) and the diffusion flux induced by an increase in the bulk energy due to broken bonds (and directed from irradiated to dark regions) can result in either a positive or negative net mass transfer in the irradiated region. Depending on the light intensity, one can obtain either formation of bumps or depressions in the illuminated regions.

Original languageEnglish
Article number061906
JournalApplied Physics Letters
Volume97
Issue number6
DOIs
StatePublished - 9 Aug 2010

Bibliographical note

Funding Information:
The authors are thankful to V. B. Sandomirsky and M. I. Klinger for useful discussions. This work was supported by the Grant Nos. K67685 and CK80126 of the Hungarian Scientific Research Fund. The work is also supported by TÁMOP 4.2.1-08/1-2008-003 project.

Funding

The authors are thankful to V. B. Sandomirsky and M. I. Klinger for useful discussions. This work was supported by the Grant Nos. K67685 and CK80126 of the Hungarian Scientific Research Fund. The work is also supported by TÁMOP 4.2.1-08/1-2008-003 project.

FundersFunder number
TÁMOP4.2.1-08/1-2008-003
Hungarian Scientific Research Fund

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