Abstract
Photo-darkening (PD) and surface relief (SR) recording is applicable for fabrication of photonic elements in amorphous chalcogenides. While SR in As20Se80 layers was found very efficient, the influence of PD on recording and thermal stability need to be established. Thermally activated transient and reversible components of PD were detected. From temperature dependent characteristic times of recording and erasing for both PD components rather low activation energies (17 and 13 meV) for the recording process and high activation energies (210 and 90 meV) for erasing were determined. The mechanisms of relevant processes and stability of optical relief recording are discussed.
Original language | English |
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Pages (from-to) | 646-650 |
Number of pages | 5 |
Journal | Journal of Optoelectronics and Advanced Materials |
Volume | 20 |
State | Published - Nov 2018 |
Bibliographical note
Publisher Copyright:© 2018 National Institute of Optoelectronics. All Rights Reserved.
Keywords
- Activation energy
- Amorphous chalcogenides
- Optical recording
- Photo-darkening
- Temperature dependence