Kinetics of interfacial layer formation during deposition of HfO 2 on silicon

C. Essary; J. M. Howard; V. Craciun; D. Craciun; R. K. Singh

doi:10.1016/j.tsf.2003.10.048

Kinetics of interfacial layer formation during deposition of HfO ₂ on silicon

C. Essary, J. M. Howard, V. Craciun, D. Craciun, R. K. Singh

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Very thin HfO₂ films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO₂ and SiO₂ without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO₂, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO₂, therefore corroborating the XPS results.

Original language	English
Pages (from-to)	111-113
Number of pages	3
Journal	Thin Solid Films
Volume	450
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2003.10.048
State	Published - 22 Feb 2004
Externally published	Yes
Event	Proceedings of Symposium M on Optical and X-Ray Metrology - Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

Hafnium oxide
High-k dielectrics
Interfacial layer
Laser ablation
Thin films

Access to Document

10.1016/j.tsf.2003.10.048

Cite this

@article{0d5ff858a3e14019bb40cf41057312a4,

title = "Kinetics of interfacial layer formation during deposition of HfO 2 on silicon",

abstract = "Very thin HfO2 films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO2 and SiO2 without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO2, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO2, therefore corroborating the XPS results.",

keywords = "Hafnium oxide, High-k dielectrics, Interfacial layer, Laser ablation, Thin films",

author = "C. Essary and Howard, {J. M.} and V. Craciun and D. Craciun and Singh, {R. K.}",

year = "2004",

month = feb,

day = "22",

doi = "10.1016/j.tsf.2003.10.048",

language = "אנגלית",

volume = "450",

pages = "111--113",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

note = "Proceedings of Symposium M on Optical and X-Ray Metrology ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Kinetics of interfacial layer formation during deposition of HfO 2 on silicon

AU - Essary, C.

AU - Howard, J. M.

AU - Craciun, V.

AU - Craciun, D.

AU - Singh, R. K.

PY - 2004/2/22

Y1 - 2004/2/22

N2 - Very thin HfO2 films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO2 and SiO2 without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO2, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO2, therefore corroborating the XPS results.

AB - Very thin HfO2 films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO2 and SiO2 without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO2, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO2, therefore corroborating the XPS results.

KW - Hafnium oxide

KW - High-k dielectrics

KW - Interfacial layer

KW - Laser ablation

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=1242332991&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.10.048

DO - 10.1016/j.tsf.2003.10.048

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:1242332991

SN - 0040-6090

VL - 450

SP - 111

EP - 113

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of Symposium M on Optical and X-Ray Metrology

Y2 - 10 June 2003 through 13 June 2003

ER -

Kinetics of interfacial layer formation during deposition of HfO ₂ on silicon

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this