Junction sharpness in field-induced transistor structures in CuxAg1-xInSe2

N. S. McAlpine, P. McConville, D. Haneman, L. Chernyak, D. Cahen

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We have measured the widths of the transition regions at p-n-p junctions that are formed on CuxAg1-xInSe2 by high electric field at room temperature, by using a scanning tunneling microscope with capacity for measuring current-voltage curves on physical contact. We find marked transition regions of low conductivity with widths in the range of 1.3-5 μm. This shows that the junction created by the electromigration mechanism in this material, while diffuse by the standards of those produced by high-temperature or high-energy methods, are remarkably sharp by solid-state ionic measures.

Original languageEnglish
Pages (from-to)7370-7372
Number of pages3
JournalJournal of Applied Physics
Issue number9
StatePublished - 1 May 1996
Externally publishedYes


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