Junction electroluminescence from microscopic diode structures in CuInSe₂, prepared by electric field‐assisted doping

Light emitting diodes where the efficiency of the junction electroluminescence has been improved over devices fabricated using thermal in‐diffusion methods, is demonstrated for structures such as that shown in the figure, which is an electric‐field‐induced device. As E‐field produced transistors are already available, combined monolithic LED/transistor structures produced using E‐field‐Induced doping of semiconductors could be possible. (Figure Presented.)