I-V curves of Y-Ba-Cu-O microbridges in the flux flow regime

B. Kalisky, Y. Wolfus, Y. Yeshurun, G. Koren, R. P. Huebener

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

We report on measurements of I-V curves in microbridges of thin Y-Ba-Cu-O films of different thickness, in the presence of external magnetic fields up to 6 T. A discontinuity is observed at a critical voltage, V*, in the flux flow regime, reflecting an electronic instability, as predicted by Larkin and Ovchinnikov (LO), and in agreement with results reported by Doettinger et al. [Phys. Rev. Let. 73 (1994) 1691]. The critical voltage, V*, and the flux flow resistance, R0, in the limit V→0, are calculated by fitting the data to the LO model. We find that the vortex critical velocity, v*, at the instability, derived from V*, decreases with magnetic field and film thickness. These results, not predicted by the LO theory, reflect the dependence of the (spatially averaged) quasiparticle energy relaxation rate on magnetic field and film thickness.

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalPhysica C: Superconductivity and its Applications
Volume401
Issue number1-4
DOIs
StatePublished - 15 Jan 2004
EventProceedings of the International Cryogenic Materials Conference - Enschede, Netherlands
Duration: 25 May 200328 May 2003

Bibliographical note

Funding Information:
This research was supported in part by the German–Israel Foundation (GIF), the Heinrich Hertz Minerva Center for High Temperature Superconductivity, and the Israel Science Foundation (ISF), center of excellence program.

Keywords

  • Electronic instability
  • I-V curve
  • Y-Ba-Cu-O

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