Abstract
The effect of reactor neutron irradiation on the structure of germanium nanocrystals ion-implanted into an amorphous silicon dioxide film was studied using laser Raman scattering, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. The sample irradiation with a high dose of fast reactor neutrons resulted in lattice destruction and amorphization of a part of nanocrystals, leaving off a significant part well retained. Thus indicating that this nano-based material may have potential for the fabrication of devices operating under extreme conditions. Radiation defect annealing and full restoration of the nanocrystal structure were observed at 800°C; however, the average size of nanocrystals and their spatial distribution were changed.
| Original language | English |
|---|---|
| Pages (from-to) | 2201-2204 |
| Number of pages | 4 |
| Journal | Physics of the Solid State |
| Volume | 54 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2012 |
Bibliographical note
Funding Information:This study was supported in part by the Ministry of Science and Technology of Israel (grant no. 3 405) in cooperation with the State Commission of Science and Technology of China and the Eric and Sheila Samson Chair of Semiconductor Technology of the Bar Ilan University.
Funding
This study was supported in part by the Ministry of Science and Technology of Israel (grant no. 3 405) in cooperation with the State Commission of Science and Technology of China and the Eric and Sheila Samson Chair of Semiconductor Technology of the Bar Ilan University.
| Funders | Funder number |
|---|---|
| State Commission of Science and Technology of China | |
| Bar-Ilan University | |
| Ministry of science and technology, Israel | 3 405 |