The effect of reactor neutron irradiation on the structure of germanium nanocrystals ion-implanted into an amorphous silicon dioxide film was studied using laser Raman scattering, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. The sample irradiation with a high dose of fast reactor neutrons resulted in lattice destruction and amorphization of a part of nanocrystals, leaving off a significant part well retained. Thus indicating that this nano-based material may have potential for the fabrication of devices operating under extreme conditions. Radiation defect annealing and full restoration of the nanocrystal structure were observed at 800°C; however, the average size of nanocrystals and their spatial distribution were changed.
Bibliographical noteFunding Information:
This study was supported in part by the Ministry of Science and Technology of Israel (grant no. 3 405) in cooperation with the State Commission of Science and Technology of China and the Eric and Sheila Samson Chair of Semiconductor Technology of the Bar Ilan University.