Abstract
The effect of reactor neutron irradiation on the structure of germanium nanocrystals ion-implanted into an amorphous silicon dioxide film was studied using laser Raman scattering, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. The sample irradiation with a high dose of fast reactor neutrons resulted in lattice destruction and amorphization of a part of nanocrystals, leaving off a significant part well retained. Thus indicating that this nano-based material may have potential for the fabrication of devices operating under extreme conditions. Radiation defect annealing and full restoration of the nanocrystal structure were observed at 800°C; however, the average size of nanocrystals and their spatial distribution were changed.
Original language | English |
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Pages (from-to) | 2201-2204 |
Number of pages | 4 |
Journal | Physics of the Solid State |
Volume | 54 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2012 |
Bibliographical note
Funding Information:This study was supported in part by the Ministry of Science and Technology of Israel (grant no. 3 405) in cooperation with the State Commission of Science and Technology of China and the Eric and Sheila Samson Chair of Semiconductor Technology of the Bar Ilan University.