Irradiation-induced metal-insulator transition in monolayer graphene

I. Shlimak; E. Zion; A. Butenko; Yu Kaganovskii; V. Richter; A. Sharoni; E. Kogan; M. Kaveh

doi:10.1016/j.flatc.2019.01.001

Irradiation-induced metal-insulator transition in monolayer graphene

I. Shlimak, E. Zion, A. Butenko, Yu Kaganovskii, V. Richter, A. Sharoni, E. Kogan, M. Kaveh

Department of Physics - at Bar-Ilan University

Bar-Ilan University

Research output: Contribution to journal › Review article › peer-review

4 Scopus citations

Abstract

A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when the conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR. Theoretical analysis is in a good agreement with experimental data.

Original language	English
Article number	100084
Journal	FlatChem
Volume	14
DOIs	https://doi.org/10.1016/j.flatc.2019.01.001
State	Published - Mar 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Funding

We are thankful to D. Naveh, A. Haran, L. Wolfson, T. Havdala who took part in various stages of the measurements. This work was supported by the Jack and Perl Resnick Institute of Advanced Technology research foundation .

Funders	Funder number
Jack and Perl Resnick Institute of Advanced Technology research foundation

Keywords

Graphene
Ion irradiation
Metal-insulator transition

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10.1016/j.flatc.2019.01.001

Cite this

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abstract = "A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when the conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR. Theoretical analysis is in a good agreement with experimental data.",

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AU - Zion, E.

AU - Butenko, A.

AU - Kaganovskii, Yu

AU - Richter, V.

AU - Sharoni, A.

AU - Kogan, E.

AU - Kaveh, M.

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Irradiation-induced metal-insulator transition in monolayer graphene

Abstract

Bibliographical note

Funding

Keywords

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