Ionic mobility and electronic junction movement in CuInSe2

David Soltz; Geula Dagan; David Cahen

doi:10.1016/0167-2738(88)90339-6

Ionic mobility and electronic junction movement in CuInSe₂

David Soltz
, Geula Dagan
, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Two electronic methods to follow the migration of constituent species in CuInSe₂, thermally and/or electrically driven, are examined. Electron beam-induced current measurements were used to trace the formation and progression of junctions into single-crystal p-type samples, which were heated in the presence of Cu and In sources. A diffusion coefficient of ∼6 × 10^-9 cm² s^-1 was calculated for Cu at 300°C, while that for In was some two times smaller. Potentiostatic current versus time measurements (cf. Kleinfeld and Wiemhöfer, this conference) were performed on a sample at various temperatures between 18 and 100°C, and a diffusion coefficient of 2×10^-8 cm² s^-1 was obtained for the mobile ionic species at 100°C.

Original language	English
Pages (from-to)	1105-1110
Number of pages	6
Journal	Solid State Ionics
Volume	28-30
Issue number	PART 2
DOIs	https://doi.org/10.1016/0167-2738(88)90339-6
State	Published - Sep 1988
Externally published	Yes

Funding

We wish to thank the US-Israel Binational Science Foundation,J erusalem,I srael and the BMFT (Fed. Rep. Germany), throught he KFA Jiilich and the Israel National Council for R&D for financial support,a nd Baruch Vainas for providing valuable advicei n the preparationo f this manuscript.

Funders
Israel National Council
KFA Jiilich

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abstract = "Two electronic methods to follow the migration of constituent species in CuInSe2, thermally and/or electrically driven, are examined. Electron beam-induced current measurements were used to trace the formation and progression of junctions into single-crystal p-type samples, which were heated in the presence of Cu and In sources. A diffusion coefficient of ∼6 × 10-9 cm2 s-1 was calculated for Cu at 300°C, while that for In was some two times smaller. Potentiostatic current versus time measurements (cf. Kleinfeld and Wiemh{\"o}fer, this conference) were performed on a sample at various temperatures between 18 and 100°C, and a diffusion coefficient of 2×10-8 cm2 s-1 was obtained for the mobile ionic species at 100°C.",

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AU - Soltz, David

AU - Dagan, Geula

AU - Cahen, David

PY - 1988/9

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N2 - Two electronic methods to follow the migration of constituent species in CuInSe2, thermally and/or electrically driven, are examined. Electron beam-induced current measurements were used to trace the formation and progression of junctions into single-crystal p-type samples, which were heated in the presence of Cu and In sources. A diffusion coefficient of ∼6 × 10-9 cm2 s-1 was calculated for Cu at 300°C, while that for In was some two times smaller. Potentiostatic current versus time measurements (cf. Kleinfeld and Wiemhöfer, this conference) were performed on a sample at various temperatures between 18 and 100°C, and a diffusion coefficient of 2×10-8 cm2 s-1 was obtained for the mobile ionic species at 100°C.

AB - Two electronic methods to follow the migration of constituent species in CuInSe2, thermally and/or electrically driven, are examined. Electron beam-induced current measurements were used to trace the formation and progression of junctions into single-crystal p-type samples, which were heated in the presence of Cu and In sources. A diffusion coefficient of ∼6 × 10-9 cm2 s-1 was calculated for Cu at 300°C, while that for In was some two times smaller. Potentiostatic current versus time measurements (cf. Kleinfeld and Wiemhöfer, this conference) were performed on a sample at various temperatures between 18 and 100°C, and a diffusion coefficient of 2×10-8 cm2 s-1 was obtained for the mobile ionic species at 100°C.

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Ionic mobility and electronic junction movement in CuInSe₂

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