Ion-beam polishing of diamond thin films

Dong Gu Lee, Rajiv K. Singh

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations


Planarization of diamond thin films has been carried out using a remote electron cyclotron resonance (ECR) oxygen plasma under a negative bias. Diamond thin films were synthesized by hot filament chemical vapor deposition (HFCVD). The surface roughness (Ra) of the diamond films could be considerably reduced from 0.2 μm to 0.05 μm using the ECR oxygen plasma. Low planarization and a high etching rate of diamond films were observed for an incident angle of the ion beam to the film surface normal below 45 degrees. High applied bias above--600 V caused secondary discharge effects, resulting in inhomogeneous etching. With an increase in incident angle, needle-like morphology was observed in the diamond film.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: 28 Nov 19942 Dec 1994


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