Investigation of chemical mechanical polishing of zinc oxide thin films

Sushant Gupta, Purushottam Kumar, A. Arul Chakkaravathi, Doina Craciun, Rajiv K. Singh

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 (as compared to the initial roughness of 26 ± 6 ) were obtained under optimized conditions with removal rates as high as 670 /min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.

Original languageEnglish
Pages (from-to)5837-5843
Number of pages7
JournalApplied Surface Science
Issue number13
StatePublished - 15 Apr 2011
Externally publishedYes


  • Chemical mechanical polishing
  • Thin films
  • Transparent conducting oxide
  • Zinc oxide


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