Investigation of chemical mechanical polishing of zinc oxide thin films

Sushant Gupta; Purushottam Kumar; A. Arul Chakkaravathi; Doina Craciun; Rajiv K. Singh

doi:10.1016/j.apsusc.2011.01.116

Investigation of chemical mechanical polishing of zinc oxide thin films

Sushant Gupta, Purushottam Kumar, A. Arul Chakkaravathi, Doina Craciun, Rajiv K. Singh

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 (as compared to the initial roughness of 26 ± 6 ) were obtained under optimized conditions with removal rates as high as 670 /min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.

Original language	English
Pages (from-to)	5837-5843
Number of pages	7
Journal	Applied Surface Science
Volume	257
Issue number	13
DOIs	https://doi.org/10.1016/j.apsusc.2011.01.116
State	Published - 15 Apr 2011
Externally published	Yes

Keywords

Chemical mechanical polishing
Thin films
Transparent conducting oxide
Zinc oxide

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10.1016/j.apsusc.2011.01.116

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@article{ca4a3e5f37694061954360d17baec3bf,

title = "Investigation of chemical mechanical polishing of zinc oxide thin films",

abstract = "Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 (as compared to the initial roughness of 26 ± 6 ) were obtained under optimized conditions with removal rates as high as 670 /min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.",

keywords = "Chemical mechanical polishing, Thin films, Transparent conducting oxide, Zinc oxide",

author = "Sushant Gupta and Purushottam Kumar and Chakkaravathi, {A. Arul} and Doina Craciun and Singh, {Rajiv K.}",

year = "2011",

month = apr,

day = "15",

doi = "10.1016/j.apsusc.2011.01.116",

language = "אנגלית",

volume = "257",

pages = "5837--5843",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "13",

}

TY - JOUR

T1 - Investigation of chemical mechanical polishing of zinc oxide thin films

AU - Gupta, Sushant

AU - Kumar, Purushottam

AU - Chakkaravathi, A. Arul

AU - Craciun, Doina

AU - Singh, Rajiv K.

PY - 2011/4/15

Y1 - 2011/4/15

N2 - Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 (as compared to the initial roughness of 26 ± 6 ) were obtained under optimized conditions with removal rates as high as 670 /min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.

AB - Zinc oxide has become an important material for various applications. Commercially available zinc oxide single crystals and as-grown zinc oxide thin films have high surface roughness which has detrimental effects on the growth of subsequent layers and device performance. A chemical mechanical polishing (CMP) process was developed for the polishing of zinc oxide polycrystalline thin films. Highly smooth surfaces with RMS roughness <6 (as compared to the initial roughness of 26 ± 6 ) were obtained under optimized conditions with removal rates as high as 670 /min. Effects of various CMP parameters on removal rate and surface roughness were evaluated. The role of pH on the polishing characteristics was investigated in detail.

KW - Chemical mechanical polishing

KW - Thin films

KW - Transparent conducting oxide

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=79952537716&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2011.01.116

DO - 10.1016/j.apsusc.2011.01.116

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:79952537716

SN - 0169-4332

VL - 257

SP - 5837

EP - 5843

JO - Applied Surface Science

JF - Applied Surface Science

IS - 13

ER -

Investigation of chemical mechanical polishing of zinc oxide thin films

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