Inversion of the direction of photo-induced mass transport in As 20Se80 films: Experiment and theory

Yu Kaganovskii; D. L. Beke; S. Charnovych; S. Kökényesi; M. L. Trunov

doi:10.1063/1.3636392

Inversion of the direction of photo-induced mass transport in As ₂₀Se₈₀ films: Experiment and theory

Yu Kaganovskii, D. L. Beke, S. Charnovych, S. Kökényesi, M. L. Trunov

Department of Physics

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Diffusion mass transfer in thin chalcogenide films under illumination by a focused Gaussian beam have been studied both experimentally and theoretically. It is demonstrated that depending on the light intensity, waist of the beam, and the film thickness, one can obtain formation of either hillocks or dips in the illuminated regions. By comparison of the kinetics of hillock or dip formation on a surface of As₂₀Se₈₀ glass films with the results of our theoretical analysis, we have estimated the photo-induced diffusion coefficients, D, at various light intensities, I, and found D to be proportional to I (D I), with ≈ 1.5 10^-18 m⁴/J.

Original language	English
Article number	063502
Journal	Journal of Applied Physics
Volume	110
Issue number	6
DOIs	https://doi.org/10.1063/1.3636392
State	Published - 15 Sep 2011

Bibliographical note

Funding Information:
This work is supported by Grant CK80126 of the Hungarian Scientific Research Fund and by the TAMOP 4.2.1./B-09/1/KONV-2010-007 project, which is co-financed by the European Union and European Social Fund.

Funding

This work is supported by Grant CK80126 of the Hungarian Scientific Research Fund and by the TAMOP 4.2.1./B-09/1/KONV-2010-007 project, which is co-financed by the European Union and European Social Fund.

Funders	Funder number
European Commission
Hungarian Scientific Research Fund
European Social Fund

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10.1063/1.3636392

Cite this

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abstract = "Diffusion mass transfer in thin chalcogenide films under illumination by a focused Gaussian beam have been studied both experimentally and theoretically. It is demonstrated that depending on the light intensity, waist of the beam, and the film thickness, one can obtain formation of either hillocks or dips in the illuminated regions. By comparison of the kinetics of hillock or dip formation on a surface of As20Se80 glass films with the results of our theoretical analysis, we have estimated the photo-induced diffusion coefficients, D, at various light intensities, I, and found D to be proportional to I (D I), with ≈ 1.5 10-18 m4/J.",

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