Interfacial layer formation during high-temperature annealing of ZrO 2 thin films on Si

J. M. Howard; V. Craciun; C. Essary; R. K. Singh

doi:10.1063/1.1517407

Interfacial layer formation during high-temperature annealing of ZrO ₂ thin films on Si

J. M. Howard, V. Craciun, C. Essary, R. K. Singh

University of Florida

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

High-k materials deposited directly on silicon exhibit an interfacial layer between the grown layer and the underlying substrate. This is of particular concern in metal-oxide-semiconductor technologies where these layers have a deleterious effect on the overall capacitance of the resulting devices. In this letter, the growth and properties of this silicatelike interfacial layer are examined after postdeposition anneals in a vacuum, inert, and oxidizing atmospheres. X-ray reflectivity, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy have been used to characterize the growth and properties of this interfacial layer.

Original language	English
Pages (from-to)	3431-3433
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	18
DOIs	https://doi.org/10.1063/1.1517407
State	Published - 28 Oct 2002
Externally published	Yes

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AB - High-k materials deposited directly on silicon exhibit an interfacial layer between the grown layer and the underlying substrate. This is of particular concern in metal-oxide-semiconductor technologies where these layers have a deleterious effect on the overall capacitance of the resulting devices. In this letter, the growth and properties of this silicatelike interfacial layer are examined after postdeposition anneals in a vacuum, inert, and oxidizing atmospheres. X-ray reflectivity, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy have been used to characterize the growth and properties of this interfacial layer.

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Interfacial layer formation during high-temperature annealing of ZrO ₂ thin films on Si

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