Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

Keyphrases

• Dielectric Properties 100%
• Bonding Properties 100%
• Interfacial Layer 100%
• Dielectric Thin Films 100%
• Gate Dielectric 100%
• Hafnia 100%
• Interlayer Bonding 100%
• Nitrogen Doping 66%
• Low Temperature 33%
• Pulsed Laser Deposition 33%
• Nitrogen Incorporation 33%
• Violet 33%
• Electrical Response 33%
• Leakage Current Density 33%
• Oxidation Method 33%
• Layer Characterization 33%
• Equivalent Oxide Thickness 33%
• Doped HfO2 33%

Engineering

• Dielectrics 100%
• Gate Dielectric 100%
• Interfacial Layer 100%
• Thin Films 100%
• Pulsed Laser 50%
• Low-Temperature 50%
• Low Current Density 50%
• Oxide Thickness 50%
• Si Interface 50%

Material Science

• Film 100%
• Dielectric Material 100%
• Dielectric Property 100%
• Thin Films 100%
• Density 33%
• Oxidation Reaction 33%
• Pulsed Laser Deposition 33%
• Oxide Compound 33%