Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

Karthik Ramani; Chad Robert Essary; Valentin Craciun; Rajiv K. Singh

doi:10.1557/proc-0917-e07-02

Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

Karthik Ramani, Chad Robert Essary, Valentin Craciun, Rajiv K. Singh

University of Florida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The electrical response and interfacial layer characterization of nitrogen doped HfO₂ gate dielectric thin films are reported. The films were processed at relatively low temperature (∼ 400 °C) by pulsed laser deposition and ultra-violet radiation assisted oxidation technique. Nitrogen incorporation in the hafnia films led to O-N and Hf-Si-O-N bonding in the bulk and at hafnia-Si interface respectively. The nitrogen doped hafnia films exhibited a leakage current density lower than 10^-5 A/cm² at -1 V and a simulated equivalent oxide thickness of 9.4 Å.

Original language	English
Title of host publication	Gate Stack Scaling
Subtitle of host publication	Materials Selection, Role of Interfaces, and Reliability Implications
Publisher	Materials Research Society
Pages	88-94
Number of pages	7
ISBN (Print)	1558998748, 9781558998742
DOIs	https://doi.org/10.1557/proc-0917-e07-02
State	Published - 2006
Externally published	Yes
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: 19 Apr 2006 → 21 Apr 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	917
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	19/04/06 → 21/04/06

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10.1557/proc-0917-e07-02

Cite this

Ramani, K., Essary, C. R., Craciun, V., & Singh, R. K. (2006). Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films. In Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications (pp. 88-94). (Materials Research Society Symposium Proceedings; Vol. 917). Materials Research Society. https://doi.org/10.1557/proc-0917-e07-02

@inproceedings{afc9bd1dde874302824ccb3e30a8e411,

title = "Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films",

abstract = "The electrical response and interfacial layer characterization of nitrogen doped HfO2 gate dielectric thin films are reported. The films were processed at relatively low temperature (∼ 400 °C) by pulsed laser deposition and ultra-violet radiation assisted oxidation technique. Nitrogen incorporation in the hafnia films led to O-N and Hf-Si-O-N bonding in the bulk and at hafnia-Si interface respectively. The nitrogen doped hafnia films exhibited a leakage current density lower than 10-5 A/cm2 at -1 V and a simulated equivalent oxide thickness of 9.4 {\AA}.",

author = "Karthik Ramani and Essary, {Chad Robert} and Valentin Craciun and Singh, {Rajiv K.}",

year = "2006",

doi = "10.1557/proc-0917-e07-02",

language = "אנגלית",

isbn = "1558998748",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "88--94",

booktitle = "Gate Stack Scaling",

address = "ארצות הברית",

note = "2006 MRS Spring Meeting ; Conference date: 19-04-2006 Through 21-04-2006",

}

Ramani, K, Essary, CR, Craciun, V & Singh, RK 2006, Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films. in Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications. Materials Research Society Symposium Proceedings, vol. 917, Materials Research Society, pp. 88-94, 2006 MRS Spring Meeting, San Francisco, CA, United States, 19/04/06. https://doi.org/10.1557/proc-0917-e07-02

Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films. / Ramani, Karthik; Essary, Chad Robert; Craciun, Valentin et al.
Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications. Materials Research Society, 2006. p. 88-94 (Materials Research Society Symposium Proceedings; Vol. 917).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The electrical response and interfacial layer characterization of nitrogen doped HfO2 gate dielectric thin films are reported. The films were processed at relatively low temperature (∼ 400 °C) by pulsed laser deposition and ultra-violet radiation assisted oxidation technique. Nitrogen incorporation in the hafnia films led to O-N and Hf-Si-O-N bonding in the bulk and at hafnia-Si interface respectively. The nitrogen doped hafnia films exhibited a leakage current density lower than 10-5 A/cm2 at -1 V and a simulated equivalent oxide thickness of 9.4 Å.

AB - The electrical response and interfacial layer characterization of nitrogen doped HfO2 gate dielectric thin films are reported. The films were processed at relatively low temperature (∼ 400 °C) by pulsed laser deposition and ultra-violet radiation assisted oxidation technique. Nitrogen incorporation in the hafnia films led to O-N and Hf-Si-O-N bonding in the bulk and at hafnia-Si interface respectively. The nitrogen doped hafnia films exhibited a leakage current density lower than 10-5 A/cm2 at -1 V and a simulated equivalent oxide thickness of 9.4 Å.

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T2 - 2006 MRS Spring Meeting

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Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films

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