TY - JOUR
T1 - Interface redox engineering of Cu(In,Ga)Se2-based solar cells
T2 - The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics
AU - Kronik, Leeor
AU - Rau, Uwe
AU - Guillemoles, Jean François
AU - Braunger, Dieter
AU - Schock, Hans Werner
AU - Cahen, David
PY - 2000/2/21
Y1 - 2000/2/21
N2 - The chemical effects of oxygenation of Cu(In,Ga)Se2 (CIGS) interfaces are analyzed and are shown to involve passivation of Se deficiencies and Cu removal. The former effect is beneficial at grain boundaries, but detrimental at the CdS/CIGS interface. The latter effect is purely detrimental. Na and chemical bath deposition (CBD) treatments are shown to isolate the `good' oxygenation effect from the `bad' ones. Na is shown to promote oxygenation already before the deposition of the buffer and window layers, which allows a maximization of the benefits of Se deficiency passivation and a minimization of Cu removal. Next, the CBD of the CdS buffer layer restores the interface charge, due to creation of CdCu interface donors and possibly a removal of OSe interface acceptors. This highlights the crucial role that interface redox engineering plays in optimizing the performance of CIGS-based solar cells.
AB - The chemical effects of oxygenation of Cu(In,Ga)Se2 (CIGS) interfaces are analyzed and are shown to involve passivation of Se deficiencies and Cu removal. The former effect is beneficial at grain boundaries, but detrimental at the CdS/CIGS interface. The latter effect is purely detrimental. Na and chemical bath deposition (CBD) treatments are shown to isolate the `good' oxygenation effect from the `bad' ones. Na is shown to promote oxygenation already before the deposition of the buffer and window layers, which allows a maximization of the benefits of Se deficiency passivation and a minimization of Cu removal. Next, the CBD of the CdS buffer layer restores the interface charge, due to creation of CdCu interface donors and possibly a removal of OSe interface acceptors. This highlights the crucial role that interface redox engineering plays in optimizing the performance of CIGS-based solar cells.
UR - http://www.scopus.com/inward/record.url?scp=0033904570&partnerID=8YFLogxK
U2 - 10.1016/s0040-6090(99)00768-3
DO - 10.1016/s0040-6090(99)00768-3
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AN - SCOPUS:0033904570
SN - 0040-6090
VL - 361
SP - 353
EP - 359
JO - Thin Solid Films
JF - Thin Solid Films
Y2 - 1 June 1999 through 4 June 1999
ER -