Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes

U. M. Khan-Cheema; P. C. Klipstein; D. G. Austing; J. M. Smith; N. J. Mason; P. J. Walker; G. Hill

doi:10.1016/0038-1101(94)90340-9

Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes

U. M. Khan-Cheema, P. C. Klipstein, D. G. Austing, J. M. Smith, N. J. Mason, P. J. Walker, G. Hill

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report some of the highest 77 K peak to valley ratios (PVRs) for single heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The devices were grown with low background doping (n ≈ p ≈ 10¹⁶ cm^-3) on (100) oriented substrates by atmospheric pressure MOVPE, and were prepared by switching the precursors in a predetermined order, to have "InSb" or "GaAs" like interfaces. We observe a stronger resonance with a weaker temperature dependence when the interface is "GaAs" like. In all samples, the voltage of the resonance and the peak current both decrease with hydrostatic pressure due to the pressure induced decrease of band overlap. Our results are consistent with a shift of -10 meV/kbar, and overlaps of 120 ± 20 meV and 250 ± 50 meV respectively for "InSb" like and "GaAs" like interfaces, and are in agreement with high pressure parallel transport results in superlattices with "InSb" like interfaces.

Original language	English
Pages (from-to)	977-979
Number of pages	3
Journal	Solid-State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90340-9
State	Published - 1994
Externally published	Yes

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title = "Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes",

abstract = "We report some of the highest 77 K peak to valley ratios (PVRs) for single heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The devices were grown with low background doping (n ≈ p ≈ 1016 cm-3) on (100) oriented substrates by atmospheric pressure MOVPE, and were prepared by switching the precursors in a predetermined order, to have {"}InSb{"} or {"}GaAs{"} like interfaces. We observe a stronger resonance with a weaker temperature dependence when the interface is {"}GaAs{"} like. In all samples, the voltage of the resonance and the peak current both decrease with hydrostatic pressure due to the pressure induced decrease of band overlap. Our results are consistent with a shift of -10 meV/kbar, and overlaps of 120 ± 20 meV and 250 ± 50 meV respectively for {"}InSb{"} like and {"}GaAs{"} like interfaces, and are in agreement with high pressure parallel transport results in superlattices with {"}InSb{"} like interfaces.",

author = "Khan-Cheema, {U. M.} and Klipstein, {P. C.} and Austing, {D. G.} and Smith, {J. M.} and Mason, {N. J.} and Walker, {P. J.} and G. Hill",

year = "1994",

doi = "10.1016/0038-1101(94)90340-9",

language = "אנגלית",

volume = "37",

pages = "977--979",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes

AU - Khan-Cheema, U. M.

AU - Klipstein, P. C.

AU - Austing, D. G.

AU - Smith, J. M.

AU - Mason, N. J.

AU - Walker, P. J.

AU - Hill, G.

PY - 1994

Y1 - 1994

N2 - We report some of the highest 77 K peak to valley ratios (PVRs) for single heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The devices were grown with low background doping (n ≈ p ≈ 1016 cm-3) on (100) oriented substrates by atmospheric pressure MOVPE, and were prepared by switching the precursors in a predetermined order, to have "InSb" or "GaAs" like interfaces. We observe a stronger resonance with a weaker temperature dependence when the interface is "GaAs" like. In all samples, the voltage of the resonance and the peak current both decrease with hydrostatic pressure due to the pressure induced decrease of band overlap. Our results are consistent with a shift of -10 meV/kbar, and overlaps of 120 ± 20 meV and 250 ± 50 meV respectively for "InSb" like and "GaAs" like interfaces, and are in agreement with high pressure parallel transport results in superlattices with "InSb" like interfaces.

AB - We report some of the highest 77 K peak to valley ratios (PVRs) for single heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The devices were grown with low background doping (n ≈ p ≈ 1016 cm-3) on (100) oriented substrates by atmospheric pressure MOVPE, and were prepared by switching the precursors in a predetermined order, to have "InSb" or "GaAs" like interfaces. We observe a stronger resonance with a weaker temperature dependence when the interface is "GaAs" like. In all samples, the voltage of the resonance and the peak current both decrease with hydrostatic pressure due to the pressure induced decrease of band overlap. Our results are consistent with a shift of -10 meV/kbar, and overlaps of 120 ± 20 meV and 250 ± 50 meV respectively for "InSb" like and "GaAs" like interfaces, and are in agreement with high pressure parallel transport results in superlattices with "InSb" like interfaces.

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U2 - 10.1016/0038-1101(94)90340-9

DO - 10.1016/0038-1101(94)90340-9

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AN - SCOPUS:0028408398

SN - 0038-1101

VL - 37

SP - 977

EP - 979

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4-6

ER -

Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes

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