TY - GEN
T1 - Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces
AU - Kumar, Pramod
AU - Agrawal, Ruchi
AU - Ghosh, Subhasis
PY - 2007
Y1 - 2007
N2 - Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals leading to a metal independent injection barrier or Fermi level pinning at metal/PTCDA interfaces.
AB - Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals leading to a metal independent injection barrier or Fermi level pinning at metal/PTCDA interfaces.
UR - http://www.scopus.com/inward/record.url?scp=49749112443&partnerID=8YFLogxK
U2 - 10.1109/iwpsd.2007.4472583
DO - 10.1109/iwpsd.2007.4472583
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AN - SCOPUS:49749112443
SN - 9781424417285
T3 - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
SP - 578
EP - 581
BT - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
T2 - 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Y2 - 16 December 2007 through 20 December 2007
ER -