Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

Pramod Kumar, Ruchi Agrawal, Subhasis Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals leading to a metal independent injection barrier or Fermi level pinning at metal/PTCDA interfaces.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages578-581
Number of pages4
DOIs
StatePublished - 2007
Externally publishedYes
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 16 Dec 200720 Dec 2007

Publication series

NameProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/TerritoryIndia
CityMumbai
Period16/12/0720/12/07

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