TY - JOUR
T1 - Interaction of Diethyldithiocarbamate with n-Type Cadmium Sulfide and Cadmium Selenide
T2 - Efficient Photoelectrochemical Oxidation to the Disulfide and Flat-Band Potential of the Semiconductor as a Function of Adsorbate Concentration
AU - Thackeray, James W.
AU - Natan, Michael J.
AU - Ng, Pohleng
AU - Wrighton, Mark S.
PY - 1986
Y1 - 1986
N2 - : The behavior of sodium diethyldithiocarbamate, Na[Et2NCS2], at n-type semiconducting CdX (X = S, Se) in CH3CN/0.2 M NaC104 has been studied. The Et2NCS2 - interacts strongly with the CdX surface and shifts the flat-band potential, EFB, up to 1.0 V more negative with increasing Et2NCS2 - concentration. The concentration dependence of the shift in efbhas been studied in the range 0-0.2 M, with 0.01 M Et2NCS2 - being sufficient to shift EFB the maximum amount. The shift in EFB is due to excess negative charge on the CdX surface due to the presence of adsorbed dithiocarbamate. The shift in efbis assumed to be proportional to Et2NCS2 - coverage. A plot of change of EFBwith change in bulk concentration of Et2NCS2 - can be modeled by using Langmuir adsorption isotherms. Adsorption data for two bis(dithiocarbamates), Na+ 2[CH2N(Et)CS2 -]2and Na+ 2[CH2CH2CH2N(Me)CS2 -]2, show that maximum shifts of efbare obtained at lower solution concentrations than for Et2NCS2 -. The data show that the equilibrium constant for dithiocarbamate binding is somewhat greater (by a factor of 2) for CdS than CdSe. The value of EFB in the presence of 0.2 M Et2NCS2 - measured by interfacial capacitance accords well with the electrode potential corresponding to onset of photoelectrochemical oxidation upon illumination with light of energy greater than the band gap, Eg, of the semiconductor. High current efficiency (at least 98%) can be maintained to large extent conversion (70%) in the photoelectrochemical oxidation of Et2NCS2 - to [Et2NC(S)S]2at either illuminated CdS or CdSe. Oxidation of Et2NCS2 - can be effected at an electrode potential significantly more negative than Eo’of Et2NCS2 -/[Et2NC(S)S]2, showing that visible light can be used to drive the oxidation in an uphill sense. Compared to a Pt anode, the CdX (X = S, Se) photoanodes allow a voltage savings of the order of 1.0 V. The photoanodes are durable and show constant output of at least 10 mA/cm2for greater than 48 h.
AB - : The behavior of sodium diethyldithiocarbamate, Na[Et2NCS2], at n-type semiconducting CdX (X = S, Se) in CH3CN/0.2 M NaC104 has been studied. The Et2NCS2 - interacts strongly with the CdX surface and shifts the flat-band potential, EFB, up to 1.0 V more negative with increasing Et2NCS2 - concentration. The concentration dependence of the shift in efbhas been studied in the range 0-0.2 M, with 0.01 M Et2NCS2 - being sufficient to shift EFB the maximum amount. The shift in EFB is due to excess negative charge on the CdX surface due to the presence of adsorbed dithiocarbamate. The shift in efbis assumed to be proportional to Et2NCS2 - coverage. A plot of change of EFBwith change in bulk concentration of Et2NCS2 - can be modeled by using Langmuir adsorption isotherms. Adsorption data for two bis(dithiocarbamates), Na+ 2[CH2N(Et)CS2 -]2and Na+ 2[CH2CH2CH2N(Me)CS2 -]2, show that maximum shifts of efbare obtained at lower solution concentrations than for Et2NCS2 -. The data show that the equilibrium constant for dithiocarbamate binding is somewhat greater (by a factor of 2) for CdS than CdSe. The value of EFB in the presence of 0.2 M Et2NCS2 - measured by interfacial capacitance accords well with the electrode potential corresponding to onset of photoelectrochemical oxidation upon illumination with light of energy greater than the band gap, Eg, of the semiconductor. High current efficiency (at least 98%) can be maintained to large extent conversion (70%) in the photoelectrochemical oxidation of Et2NCS2 - to [Et2NC(S)S]2at either illuminated CdS or CdSe. Oxidation of Et2NCS2 - can be effected at an electrode potential significantly more negative than Eo’of Et2NCS2 -/[Et2NC(S)S]2, showing that visible light can be used to drive the oxidation in an uphill sense. Compared to a Pt anode, the CdX (X = S, Se) photoanodes allow a voltage savings of the order of 1.0 V. The photoanodes are durable and show constant output of at least 10 mA/cm2for greater than 48 h.
UR - http://www.scopus.com/inward/record.url?scp=0001422395&partnerID=8YFLogxK
U2 - 10.1021/ja00273a004
DO - 10.1021/ja00273a004
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:0001422395
SN - 0002-7863
VL - 108
SP - 3570
EP - 3577
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 13
ER -