Inhomogeneities in 130 MeV Au 12+ ion irradiated Au/n-Si (1 0 0) Schottky structure

Sandeep Kumar, Y. S. Katharria, V. Baranwal, Y. Batra, D. Kanjilal

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23 Scopus citations

Abstract

The electrical characteristics of Au/n-Si (1 0 0) Schottky rectifier have been studied in a wide irradiation fluence range using conventional current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V characteristics showed an abnormal increase in forward current at low voltage. The device shows a bend in forward I-V and reverses bias C-V characteristics due to extra current, suggesting that there are two independent contributions to thermionic current, corresponding to two levels of the Schottky barrier. It is shown that the excess current at low voltage can be explained by taking into account the role of heavy ion irradiation induced defects at the metal semiconductor interface.

Original languageEnglish
Pages (from-to)3277-3281
Number of pages5
JournalApplied Surface Science
Volume254
Issue number11
DOIs
StatePublished - 30 Mar 2008
Externally publishedYes

Keywords

  • I-V characteristics
  • Ion irradiation
  • Schottky barrier

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