TY - JOUR
T1 - Influence of swift heavy ion irradiation on electrical characteristics of Au/n-Si (1 0 0) Schottky barrier structure
AU - Kumar, Sandeep
AU - Katharria, Y. S.
AU - Batra, Y.
AU - Kanjilal, D.
PY - 2007/11/21
Y1 - 2007/11/21
N2 - The influence of swift heavy (180 MeV 107Ag14+) ion irradiation on Au/n-Si Schottky diode characteristics has been analysed using in situ current-voltage (I-V) characterization. The values of the Schottky barrier height (SBH), the ideality factor and series resistance Rs for each irradiation fluence have been obtained from the forward bias I-V characteristics. For an unirradiated diode, the SBH and ideality factor were 0.74 0.01 eV and 1.71, respectively. The barrier height decreases to 0.69 0.01 eV as the fluence increases to a value of 1 × 1011 ions cm -2. It is found that after an irradiation fluence of 1 × 1011 ions cm-2 the SBH remains immune to further irradiation up to a fluence of 5 × 1012 ions cm-2. The observed behaviour is interpreted on the basis of energy loss mechanisms of energetic ions at the metal-semiconductor interface and irradiation-induced defects.
AB - The influence of swift heavy (180 MeV 107Ag14+) ion irradiation on Au/n-Si Schottky diode characteristics has been analysed using in situ current-voltage (I-V) characterization. The values of the Schottky barrier height (SBH), the ideality factor and series resistance Rs for each irradiation fluence have been obtained from the forward bias I-V characteristics. For an unirradiated diode, the SBH and ideality factor were 0.74 0.01 eV and 1.71, respectively. The barrier height decreases to 0.69 0.01 eV as the fluence increases to a value of 1 × 1011 ions cm -2. It is found that after an irradiation fluence of 1 × 1011 ions cm-2 the SBH remains immune to further irradiation up to a fluence of 5 × 1012 ions cm-2. The observed behaviour is interpreted on the basis of energy loss mechanisms of energetic ions at the metal-semiconductor interface and irradiation-induced defects.
UR - http://www.scopus.com/inward/record.url?scp=36448937521&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/40/22/006
DO - 10.1088/0022-3727/40/22/006
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:36448937521
SN - 0022-3727
VL - 40
SP - 6892
EP - 6897
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 22
ER -