Influence of swift heavy ion irradiation on electrical characteristics of Au/n-Si (1 0 0) Schottky barrier structure

Sandeep Kumar, Y. S. Katharria, Y. Batra, D. Kanjilal

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33 Scopus citations

Abstract

The influence of swift heavy (180 MeV 107Ag14+) ion irradiation on Au/n-Si Schottky diode characteristics has been analysed using in situ current-voltage (I-V) characterization. The values of the Schottky barrier height (SBH), the ideality factor and series resistance Rs for each irradiation fluence have been obtained from the forward bias I-V characteristics. For an unirradiated diode, the SBH and ideality factor were 0.74 0.01 eV and 1.71, respectively. The barrier height decreases to 0.69 0.01 eV as the fluence increases to a value of 1 × 1011 ions cm -2. It is found that after an irradiation fluence of 1 × 1011 ions cm-2 the SBH remains immune to further irradiation up to a fluence of 5 × 1012 ions cm-2. The observed behaviour is interpreted on the basis of energy loss mechanisms of energetic ions at the metal-semiconductor interface and irradiation-induced defects.

Original languageEnglish
Pages (from-to)6892-6897
Number of pages6
JournalJournal Physics D: Applied Physics
Volume40
Issue number22
DOIs
StatePublished - 21 Nov 2007
Externally publishedYes

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