Influence of SHI irradiation on the formation of buried SiC

Y. S. Katharria; Sandeep Kumar; D. Kanjilal

doi:10.1016/j.nimb.2007.04.213

Influence of SHI irradiation on the formation of buried SiC

Y. S. Katharria, Sandeep Kumar, D. Kanjilal

Inter University Accelerator Centre India

Research output: Contribution to journal › Article › peer-review

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Abstract

Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C⁺ ions at different fluences. Two sets of samples were subsequently annealed at 850 °C and 1000 °C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag⁷⁺ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C⁺ ions.

Original language	English
Pages (from-to)	563-566
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	260
Issue number	2
DOIs	https://doi.org/10.1016/j.nimb.2007.04.213
State	Published - Jul 2007
Externally published	Yes

Keywords

Fourier transform infrared spectroscopy
Ion implantation
Swift heavy ion irradiation
X-ray diffraction

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10.1016/j.nimb.2007.04.213

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title = "Influence of SHI irradiation on the formation of buried SiC",

abstract = "Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C+ ions at different fluences. Two sets of samples were subsequently annealed at 850 °C and 1000 °C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag7+ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C+ ions.",

keywords = "Fourier transform infrared spectroscopy, Ion implantation, Swift heavy ion irradiation, X-ray diffraction",

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T1 - Influence of SHI irradiation on the formation of buried SiC

AU - Katharria, Y. S.

AU - Kumar, Sandeep

AU - Kanjilal, D.

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N2 - Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C+ ions at different fluences. Two sets of samples were subsequently annealed at 850 °C and 1000 °C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag7+ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C+ ions.

AB - Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C+ ions at different fluences. Two sets of samples were subsequently annealed at 850 °C and 1000 °C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag7+ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C+ ions.

KW - Fourier transform infrared spectroscopy

KW - Ion implantation

KW - Swift heavy ion irradiation

KW - X-ray diffraction

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Influence of SHI irradiation on the formation of buried SiC

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