Influence of SHI irradiation on the formation of buried SiC

Y. S. Katharria, Sandeep Kumar, D. Kanjilal

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C+ ions at different fluences. Two sets of samples were subsequently annealed at 850 °C and 1000 °C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag7+ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C+ ions.

Original languageEnglish
Pages (from-to)563-566
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume260
Issue number2
DOIs
StatePublished - Jul 2007
Externally publishedYes

Keywords

  • Fourier transform infrared spectroscopy
  • Ion implantation
  • Swift heavy ion irradiation
  • X-ray diffraction

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