Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity

I. Shlimak, S. Khondaker, M. Pepper, D. Ritchie

Research output: Contribution to journalArticlepeer-review

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Abstract

Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single two-dimensional (2D) layer in a δ-doped (Formula presented) heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is accompanied in strong magnetic fields by a substantial change in the character of the temperature dependence of the conductivity. This implies that spins play an important role in 2D VRH conductivity because the processes of orbital origin are not relevant to the observed effect. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intrastate correlation of spins is important.

Original languageEnglish
Pages (from-to)7253-7256
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number11
DOIs
StatePublished - 2000

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