Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation

Shaobo Dun; Tiecheng Lu; Qiang Hu; Ningkang Huang; Songbao Zhang; Bin Tang; Junlong Dai; Lev Resnick; Issai Shlimak; Sha Zhu; Qiangmin Wei; Lumin Wang

doi:10.1557/proc-0908-oo14-11

Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation

Shaobo Dun
, Tiecheng Lu
, Qiang Hu
, Ningkang Huang
, Songbao Zhang
, Bin Tang
, Junlong Dai
, Lev Resnick
, Issai Shlimak
, Sha Zhu
, Qiangmin Wei
, Lumin Wang

Department of Physics - at Bar-Ilan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ge nanocrystals embedded in an amorphous SiO₂ film on Si matrix were prepared by ion implantation and subsequent annealing. Neutron transmutation doping (NTD) technique was used to dope Ge nanocrystals with As impurities. The microstructure, phase and photoluminescence of NTDed Ge nanocrystals were analyzed and compared with undopecl Ge nanocrystals. A new photoluminescence peak related to As impurities was found. It is discovered that impurities are expelled from larger clusters resulted from Ge nanocrystals aggregation on the sample surface. To prevent nanocrystal aggregation and assure uniform doping of As, it is necessary to adopt appropriate implantation and annealing conditions.

Original language	English
Title of host publication	Growth, Modification and Analysis by Ion Beams at the Nanoscale
Publisher	Materials Research Society
Pages	153-158
Number of pages	6
ISBN (Print)	1558998632, 9781558998636
DOIs	https://doi.org/10.1557/proc-0908-oo14-11
State	Published - 2005
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: 28 Nov 2005 → 2 Dec 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	908
ISSN (Print)	0272-9172

Conference

Conference	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	28/11/05 → 2/12/05

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10.1557/proc-0908-oo14-11

Cite this

Dun, S., Lu, T., Hu, Q., Huang, N., Zhang, S., Tang, B., Dai, J., Resnick, L., Shlimak, I., Zhu, S., Wei, Q., & Wang, L. (2005). Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation. In Growth, Modification and Analysis by Ion Beams at the Nanoscale (pp. 153-158). (Materials Research Society Symposium Proceedings; Vol. 908). Materials Research Society. https://doi.org/10.1557/proc-0908-oo14-11

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title = "Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation",

abstract = "Ge nanocrystals embedded in an amorphous SiO2 film on Si matrix were prepared by ion implantation and subsequent annealing. Neutron transmutation doping (NTD) technique was used to dope Ge nanocrystals with As impurities. The microstructure, phase and photoluminescence of NTDed Ge nanocrystals were analyzed and compared with undopecl Ge nanocrystals. A new photoluminescence peak related to As impurities was found. It is discovered that impurities are expelled from larger clusters resulted from Ge nanocrystals aggregation on the sample surface. To prevent nanocrystal aggregation and assure uniform doping of As, it is necessary to adopt appropriate implantation and annealing conditions.",

author = "Shaobo Dun and Tiecheng Lu and Qiang Hu and Ningkang Huang and Songbao Zhang and Bin Tang and Junlong Dai and Lev Resnick and Issai Shlimak and Sha Zhu and Qiangmin Wei and Lumin Wang",

year = "2005",

doi = "10.1557/proc-0908-oo14-11",

language = "אנגלית",

isbn = "1558998632",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "153--158",

booktitle = "Growth, Modification and Analysis by Ion Beams at the Nanoscale",

address = "ארצות הברית",

note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

Dun, S, Lu, T, Hu, Q, Huang, N, Zhang, S, Tang, B, Dai, J, Resnick, L, Shlimak, I, Zhu, S, Wei, Q & Wang, L 2005, Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation. in Growth, Modification and Analysis by Ion Beams at the Nanoscale. Materials Research Society Symposium Proceedings, vol. 908, Materials Research Society, pp. 153-158, 2005 MRS Fall Meeting, Boston, MA, United States, 28/11/05. https://doi.org/10.1557/proc-0908-oo14-11

Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation. / Dun, Shaobo; Lu, Tiecheng; Hu, Qiang et al.
Growth, Modification and Analysis by Ion Beams at the Nanoscale. Materials Research Society, 2005. p. 153-158 (Materials Research Society Symposium Proceedings; Vol. 908).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation

AU - Dun, Shaobo

AU - Lu, Tiecheng

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AU - Zhang, Songbao

AU - Tang, Bin

AU - Dai, Junlong

AU - Resnick, Lev

AU - Shlimak, Issai

AU - Zhu, Sha

AU - Wei, Qiangmin

AU - Wang, Lumin

PY - 2005

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N2 - Ge nanocrystals embedded in an amorphous SiO2 film on Si matrix were prepared by ion implantation and subsequent annealing. Neutron transmutation doping (NTD) technique was used to dope Ge nanocrystals with As impurities. The microstructure, phase and photoluminescence of NTDed Ge nanocrystals were analyzed and compared with undopecl Ge nanocrystals. A new photoluminescence peak related to As impurities was found. It is discovered that impurities are expelled from larger clusters resulted from Ge nanocrystals aggregation on the sample surface. To prevent nanocrystal aggregation and assure uniform doping of As, it is necessary to adopt appropriate implantation and annealing conditions.

AB - Ge nanocrystals embedded in an amorphous SiO2 film on Si matrix were prepared by ion implantation and subsequent annealing. Neutron transmutation doping (NTD) technique was used to dope Ge nanocrystals with As impurities. The microstructure, phase and photoluminescence of NTDed Ge nanocrystals were analyzed and compared with undopecl Ge nanocrystals. A new photoluminescence peak related to As impurities was found. It is discovered that impurities are expelled from larger clusters resulted from Ge nanocrystals aggregation on the sample surface. To prevent nanocrystal aggregation and assure uniform doping of As, it is necessary to adopt appropriate implantation and annealing conditions.

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Influence of neutron transmutation doping on optical Properties of Ge nanocrystals prepared by ion implantation

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