Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays

Deepti Jain; Kamal Lohani; S. K. Mehta; Subodh Chandra; Pramod Kumar; Abhishek Sharma; Deepak Mohanty; Alok Jain; Satish Mohan

doi:10.1007/978-3-319-03002-9_203

Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays

Deepti Jain, Kamal Lohani, S. K. Mehta, Subodh Chandra, Pramod Kumar, Abhishek Sharma, Deepak Mohanty, Alok Jain, Satish Mohan

Solid State Physics Laboratory India

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have investigated the effect of mesa depth on the characteristics of high fill factor (typically the inter- element spacing is <~20[im and stripe width~150 (xm) laser diode arrays (LDAs). Measurements were carried out on different laser diode bars and it was observed that a shallow mesa not only increases the threshold current of these laser bars but it can prevent lasing condition for a combination of geometrical parameters of mesa. Minimum mesa depth required to achieve lasing in these laser diode arrays is calculated as a function of inter-element spacing considering the effect of lateral current spreading. The work reported here shows that in order to achieve lasing in laser diode arrays with small inter-element distance, the mesa should be deep enough to prevent electrical coupling between the neighboring stripes of LDAs.

Original language	English
Title of host publication	Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013
Editors	V.K. Jain, Abhishek Verma
Publisher	Springer Science and Business Media Deutschland GmbH
Pages	791-794
Number of pages	4
ISBN (Print)	9783319030012
DOIs	https://doi.org/10.1007/978-3-319-03002-9_203
State	Published - 2014
Externally published	Yes
Event	17th International Workshop on the Physics of Semiconductor Devices, IWPSD 2013 - Noida, India Duration: 10 Dec 2013 → 14 Dec 2013

Publication series

Name	Environmental Science and Engineering
ISSN (Print)	1863-5520
ISSN (Electronic)	1863-5539

Conference

Conference	17th International Workshop on the Physics of Semiconductor Devices, IWPSD 2013
Country/Territory	India
City	Noida
Period	10/12/13 → 14/12/13

Bibliographical note

Publisher Copyright:
© Springer International Publishing Switzerland 2014.

Funding

The authors thank Director SSPL Dr R Muralidharan for permission to publish this work. The authors are grateful to Mr A.Naik, Mrs TVSL Satyavani and Mr Amit Bhatti for support in technical work. The help provided by Mr Anil Kumar for lapping & polishing and Mr Ajeet Kumar for packaging is also acknowledged.

Keywords

Fill factor
Laser Diode arrays
Mesa
Near field
current spreading
slope efficiency
threshold current

Access to Document

10.1007/978-3-319-03002-9_203

Cite this

Jain, D., Lohani, K., Mehta, S. K., Chandra, S., Kumar, P., Sharma, A., Mohanty, D., Jain, A., & Mohan, S. (2014). Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays. In V. K. Jain, & A. Verma (Eds.), Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013 (pp. 791-794). (Environmental Science and Engineering). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-319-03002-9_203

Jain, Deepti ; Lohani, Kamal ; Mehta, S. K. et al. / Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays. Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013. editor / V.K. Jain ; Abhishek Verma. Springer Science and Business Media Deutschland GmbH, 2014. pp. 791-794 (Environmental Science and Engineering).

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abstract = "We have investigated the effect of mesa depth on the characteristics of high fill factor (typically the inter- element spacing is <~20[im and stripe width~150 (xm) laser diode arrays (LDAs). Measurements were carried out on different laser diode bars and it was observed that a shallow mesa not only increases the threshold current of these laser bars but it can prevent lasing condition for a combination of geometrical parameters of mesa. Minimum mesa depth required to achieve lasing in these laser diode arrays is calculated as a function of inter-element spacing considering the effect of lateral current spreading. The work reported here shows that in order to achieve lasing in laser diode arrays with small inter-element distance, the mesa should be deep enough to prevent electrical coupling between the neighboring stripes of LDAs.",

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author = "Deepti Jain and Kamal Lohani and Mehta, {S. K.} and Subodh Chandra and Pramod Kumar and Abhishek Sharma and Deepak Mohanty and Alok Jain and Satish Mohan",

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Jain, D, Lohani, K, Mehta, SK, Chandra, S, Kumar, P, Sharma, A, Mohanty, D, Jain, A & Mohan, S 2014, Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays. in VK Jain & A Verma (eds), Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013. Environmental Science and Engineering, Springer Science and Business Media Deutschland GmbH, pp. 791-794, 17th International Workshop on the Physics of Semiconductor Devices, IWPSD 2013, Noida, India, 10/12/13. https://doi.org/10.1007/978-3-319-03002-9_203

Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays. / Jain, Deepti; Lohani, Kamal; Mehta, S. K. et al.
Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013. ed. / V.K. Jain; Abhishek Verma. Springer Science and Business Media Deutschland GmbH, 2014. p. 791-794 (Environmental Science and Engineering).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lohani, Kamal

AU - Mehta, S. K.

AU - Chandra, Subodh

AU - Kumar, Pramod

AU - Sharma, Abhishek

AU - Mohanty, Deepak

AU - Jain, Alok

AU - Mohan, Satish

N1 - Publisher Copyright: © Springer International Publishing Switzerland 2014.

PY - 2014

Y1 - 2014

N2 - We have investigated the effect of mesa depth on the characteristics of high fill factor (typically the inter- element spacing is <~20[im and stripe width~150 (xm) laser diode arrays (LDAs). Measurements were carried out on different laser diode bars and it was observed that a shallow mesa not only increases the threshold current of these laser bars but it can prevent lasing condition for a combination of geometrical parameters of mesa. Minimum mesa depth required to achieve lasing in these laser diode arrays is calculated as a function of inter-element spacing considering the effect of lateral current spreading. The work reported here shows that in order to achieve lasing in laser diode arrays with small inter-element distance, the mesa should be deep enough to prevent electrical coupling between the neighboring stripes of LDAs.

AB - We have investigated the effect of mesa depth on the characteristics of high fill factor (typically the inter- element spacing is <~20[im and stripe width~150 (xm) laser diode arrays (LDAs). Measurements were carried out on different laser diode bars and it was observed that a shallow mesa not only increases the threshold current of these laser bars but it can prevent lasing condition for a combination of geometrical parameters of mesa. Minimum mesa depth required to achieve lasing in these laser diode arrays is calculated as a function of inter-element spacing considering the effect of lateral current spreading. The work reported here shows that in order to achieve lasing in laser diode arrays with small inter-element distance, the mesa should be deep enough to prevent electrical coupling between the neighboring stripes of LDAs.

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Jain D, Lohani K, Mehta SK, Chandra S, Kumar P, Sharma A et al. Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays. In Jain VK, Verma A, editors, Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013. Springer Science and Business Media Deutschland GmbH. 2014. p. 791-794. (Environmental Science and Engineering). doi: 10.1007/978-3-319-03002-9_203

Influence of lateral current spreading on the characteristics of high fill factor mesa-stripe laser diode arrays

Abstract

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Bibliographical note

Funding

Keywords

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