INFLUENCE OF ELECTRICAL AND MAGNETIC FIELDS ON CHARGE TRANSPORT IN HEAVILY DOPED AND STRONGLY COMPENSATED SEMICONDUCTORS.

A. G. Zabrodskii; A. I. Ionov; I. S. Shlimak

INFLUENCE OF ELECTRICAL AND MAGNETIC FIELDS ON CHARGE TRANSPORT IN HEAVILY DOPED AND STRONGLY COMPENSATED SEMICONDUCTORS.

A. G. Zabrodskii
, A. I. Ionov
, I. S. Shlimak

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An investigation was made of the low-temperature dc conductivity of heavily doped and strongly compensated germanium as a function of the temperature, and of the applied electric and magnetic fields. All the observations were explained by the hopping conduction mechanism with the average length of a jump exceeding considerably the average distance between carrier-localization centers.

Original language	English
Pages (from-to)	322-325
Number of pages	4
Journal	Soviet physics. Semiconductors
Volume	8
Issue number	3
State	Published - 1974

Cite this

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title = "INFLUENCE OF ELECTRICAL AND MAGNETIC FIELDS ON CHARGE TRANSPORT IN HEAVILY DOPED AND STRONGLY COMPENSATED SEMICONDUCTORS.",

abstract = "An investigation was made of the low-temperature dc conductivity of heavily doped and strongly compensated germanium as a function of the temperature, and of the applied electric and magnetic fields. All the observations were explained by the hopping conduction mechanism with the average length of a jump exceeding considerably the average distance between carrier-localization centers.",

author = "Zabrodskii, \{A. G.\} and Ionov, \{A. I.\} and Shlimak, \{I. S.\}",

year = "1974",

language = "אנגלית",

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journal = "Soviet physics. Semiconductors",

issn = "0038-5700",

publisher = "American Institute of Physics",

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AU - Zabrodskii, A. G.

AU - Ionov, A. I.

AU - Shlimak, I. S.

PY - 1974

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AB - An investigation was made of the low-temperature dc conductivity of heavily doped and strongly compensated germanium as a function of the temperature, and of the applied electric and magnetic fields. All the observations were explained by the hopping conduction mechanism with the average length of a jump exceeding considerably the average distance between carrier-localization centers.

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JO - Soviet physics. Semiconductors

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ER -

INFLUENCE OF ELECTRICAL AND MAGNETIC FIELDS ON CHARGE TRANSPORT IN HEAVILY DOPED AND STRONGLY COMPENSATED SEMICONDUCTORS.

Abstract

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