Abstract
An investigation was made of the low-temperature dc conductivity of heavily doped and strongly compensated germanium as a function of the temperature, and of the applied electric and magnetic fields. All the observations were explained by the hopping conduction mechanism with the average length of a jump exceeding considerably the average distance between carrier-localization centers.
| Original language | English |
|---|---|
| Pages (from-to) | 322-325 |
| Number of pages | 4 |
| Journal | Semiconductors |
| Volume | 8 |
| Issue number | 3 |
| State | Published - 1974 |