INFLUENCE OF DOPING INHOMOGENEITIES ON THE CONDUCTIVITY OF HEAVILY DOPED AND COMPENSATED SEMICONDUCTORS.

A. G. Zabrodskii; I. S. Shlimak

INFLUENCE OF DOPING INHOMOGENEITIES ON THE CONDUCTIVITY OF HEAVILY DOPED AND COMPENSATED SEMICONDUCTORS.

A. G. Zabrodskii
, I. S. Shlimak

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

An attempt to show that the presence of macroscopic doping inhomogeneities appearing during growth of crystals improves the conductivity of heavily doped and compensated semiconductors is described.

Original language	English
Pages (from-to)	391-392
Number of pages	2
Journal	Soviet physics. Semiconductors
Volume	9
Issue number	3
State	Published - 1975

Cite this

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title = "INFLUENCE OF DOPING INHOMOGENEITIES ON THE CONDUCTIVITY OF HEAVILY DOPED AND COMPENSATED SEMICONDUCTORS.",

abstract = "An attempt to show that the presence of macroscopic doping inhomogeneities appearing during growth of crystals improves the conductivity of heavily doped and compensated semiconductors is described.",

author = "Zabrodskii, \{A. G.\} and Shlimak, \{I. S.\}",

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INFLUENCE OF DOPING INHOMOGENEITIES ON THE CONDUCTIVITY OF HEAVILY DOPED AND COMPENSATED SEMICONDUCTORS.

Abstract

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