Abstract
An attempt to show that the presence of macroscopic doping inhomogeneities appearing during growth of crystals improves the conductivity of heavily doped and compensated semiconductors is described.
| Original language | English |
|---|---|
| Pages (from-to) | 391-392 |
| Number of pages | 2 |
| Journal | Semiconductors |
| Volume | 9 |
| Issue number | 3 |
| State | Published - 1975 |