Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition

Rolf Rentzsch; Ch Reich; A. N. Ionov; V. Ginodman; I. Shlimak; P. Fozooni; M. J. Lea

doi:10.1134/1.1130864

Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition

Rolf Rentzsch, Ch Reich, A. N. Ionov, V. Ginodman, I. Shlimak, P. Fozooni, M. J. Lea

Department of Physics

Research output: Contribution to journal › Review article › peer-review

2 Scopus citations

Abstract

We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly v= 1/2 and ζ= 1, which double for medium compensations (at K = 38 and 54%) to v=1 and ζ=2, respectively.

Original language	English
Pages (from-to)	757-760
Number of pages	4
Journal	Physics of the Solid State
Volume	41
Issue number	5
DOIs	https://doi.org/10.1134/1.1130864
State	Published - May 1999

Bibliographical note

Funding Information:
This work was only possible by financial support of the RFFI (Grant N 97-02-18280), INTAS Grant (93-1555/Ext.), German–Israeli Foundation (Grant N I-0319-199.07) and the British–German Foundation (Grant N 313/ARC 93-97).

Funding

This work was only possible by financial support of the RFFI (Grant N 97-02-18280), INTAS Grant (93-1555/Ext.), German–Israeli Foundation (Grant N I-0319-199.07) and the British–German Foundation (Grant N 313/ARC 93-97).

Funders	Funder number
British–German Foundation	N 313/ARC 93-97
INTAS	93-1555/Ext.
Russian Foundation for Fundamental Investigations	N 97-02-18280
German-Israeli Foundation for Scientific Research and Development	N I-0319-199.07

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title = "Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition",

abstract = "We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly v= 1/2 and ζ= 1, which double for medium compensations (at K = 38 and 54%) to v=1 and ζ=2, respectively.",

author = "Rolf Rentzsch and Ch Reich and Ionov, {A. N.} and V. Ginodman and I. Shlimak and P. Fozooni and Lea, {M. J.}",

note = "Funding Information: This work was only possible by financial support of the RFFI (Grant N 97-02-18280), INTAS Grant (93-1555/Ext.), German–Israeli Foundation (Grant N I-0319-199.07) and the British–German Foundation (Grant N 313/ARC 93-97).",

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AU - Rentzsch, Rolf

AU - Reich, Ch

AU - Ionov, A. N.

AU - Ginodman, V.

AU - Shlimak, I.

AU - Fozooni, P.

AU - Lea, M. J.

N1 - Funding Information: This work was only possible by financial support of the RFFI (Grant N 97-02-18280), INTAS Grant (93-1555/Ext.), German–Israeli Foundation (Grant N I-0319-199.07) and the British–German Foundation (Grant N 313/ARC 93-97).

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N2 - We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly v= 1/2 and ζ= 1, which double for medium compensations (at K = 38 and 54%) to v=1 and ζ=2, respectively.

AB - We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K = 1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly v= 1/2 and ζ= 1, which double for medium compensations (at K = 38 and 54%) to v=1 and ζ=2, respectively.

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Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition

Abstract

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