Abstract
Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-xGdxO2-x/2 films. The F2g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F2g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered.
Original language | English |
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Pages (from-to) | 123-126 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 137 |
DOIs | |
State | Published - Aug 2017 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2017 Acta Materialia Inc.
Funding
The authors thank the PAZY foundation (grant #711882) and the Israeli Ministry of Science and Technology (grant 3-12944) for funding this research. The research is also made possible in part by the generosity of the Harold Perlman Family.
Funders | Funder number |
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Israeli ministry of science and technology | 3-12944 |
PAZY Foundation | 711882 |
Keywords
- Anelastic relaxation
- Gd-doped ceria
- Raman spectroscopy