Inductively coupled plasma etching of Ta2O5

Kyu Pil Lee; K. B. Jung; R. K. Singh; S. J. Pearton; C. Hobbs; P. Tobin

doi:10.1149/1.1392552

Inductively coupled plasma etching of Ta2O5

Kyu Pil Lee
, K. B. Jung
, R. K. Singh
, S. J. Pearton
, C. Hobbs
, P. Tobin

University of Florida
Motorola

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A number of different plasma chemistries were examined for dry etching of thin film Ta₂O₅. Maximum etch rates of ∼1200 Å min^-1 were achieved with SF₆ or C₁₂ discharges, while CH₄/H₂/Ar and N₂/Ar produced rates an order of magnitude lower. The etch rates of Ta₂O₃ were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta₂O₅ on the resultant dry etch rates.

Original language	English
Pages (from-to)	3794-3798
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	146
Issue number	10
DOIs	https://doi.org/10.1149/1.1392552
State	Published - 1999
Externally published	Yes

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title = "Inductively coupled plasma etching of Ta2O5",

abstract = "A number of different plasma chemistries were examined for dry etching of thin film Ta2O5. Maximum etch rates of ∼1200 {\AA} min-1 were achieved with SF6 or C12 discharges, while CH4/H2/Ar and N2/Ar produced rates an order of magnitude lower. The etch rates of Ta2O3 were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta2O5 on the resultant dry etch rates.",

author = "Lee, \{Kyu Pil\} and Jung, \{K. B.\} and Singh, \{R. K.\} and Pearton, \{S. J.\} and C. Hobbs and P. Tobin",

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AU - Lee, Kyu Pil

AU - Jung, K. B.

AU - Singh, R. K.

AU - Pearton, S. J.

AU - Hobbs, C.

AU - Tobin, P.

PY - 1999

Y1 - 1999

N2 - A number of different plasma chemistries were examined for dry etching of thin film Ta2O5. Maximum etch rates of ∼1200 Å min-1 were achieved with SF6 or C12 discharges, while CH4/H2/Ar and N2/Ar produced rates an order of magnitude lower. The etch rates of Ta2O3 were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta2O5 on the resultant dry etch rates.

AB - A number of different plasma chemistries were examined for dry etching of thin film Ta2O5. Maximum etch rates of ∼1200 Å min-1 were achieved with SF6 or C12 discharges, while CH4/H2/Ar and N2/Ar produced rates an order of magnitude lower. The etch rates of Ta2O3 were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta2O5 on the resultant dry etch rates.

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IS - 10

ER -

Inductively coupled plasma etching of Ta2O5

Abstract

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