Inductively coupled plasma etching of Ta2O5

Kyu Pil Lee, K. B. Jung, R. K. Singh, S. J. Pearton, C. Hobbs, P. Tobin

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A number of different plasma chemistries were examined for dry etching of thin film Ta2O5. Maximum etch rates of ∼1200 Å min-1 were achieved with SF6 or C12 discharges, while CH4/H2/Ar and N2/Ar produced rates an order of magnitude lower. The etch rates of Ta2O3 were always slower than those for Si under the same conditions in each of the different chemistries, and there was no effect of postdeposition annealing of the Ta2O5 on the resultant dry etch rates.

Original languageEnglish
Pages (from-to)3794-3798
Number of pages5
JournalJournal of the Electrochemical Society
Issue number10
StatePublished - 1999
Externally publishedYes


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