Increased copper outplating from dilute HF solutions on microstructurally modified silicon surfaces

Keyphrases

• Silicon Surface 100%
• HF Solution 100%
• Scanning Electron Microscopy 50%
• Transmission Electron Microscopy 50%
• Particle Size 50%
• Copper Contamination 50%
• Amorphous Silicon 50%
• Face-centered Cubic 50%
• Pattern Formation 50%
• Amorphous-to-crystalline Transition 50%
• Copper Deposition 50%
• Amorphous Region 50%
• Panicle 50%
• Silicon Semiconductor 50%
• Polycrystalline Structure 50%
• Deposition Pattern 50%
• Preferential nucleation 50%
• Semiconductor Device Manufacture 50%
• Circular Boundary 50%
• Cu Deposition 50%
• Copper Ions 50%

Material Science

• Silicon 100%
• Amorphous Material 66%
• Scanning Electron Microscopy 33%
• Transmission Electron Microscopy 33%
• Crystalline Material 33%
• Amorphous Silicon 33%
• Copper Ion 33%
• Nucleation 33%
• Semiconductor Device 33%

Engineering

• Silicon Surface 100%
• Transmissions 50%
• Semiconductor Device 50%
• Face-Centered Cubic 50%
• Polycrystalline 50%
• Amorphous Region 50%