Increase in the thermoelectric efficiency of the disordered phase of layered antiferromagnetic CuCrS 2

Girish C. Tewari; T. S. Tripathi; P. Kumar; A. K. Rastogi; S. K. Pasha; Govind Gupta

doi:10.1007/s11664-011-1789-4

Increase in the thermoelectric efficiency of the disordered phase of layered antiferromagnetic CuCrS ₂

Girish C. Tewari, T. S. Tripathi, P. Kumar, A. K. Rastogi, S. K. Pasha, Govind Gupta

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS ₂ is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.

Original language	English
Pages (from-to)	2368-2373
Number of pages	6
Journal	Journal of Electronic Materials
Volume	40
Issue number	12
DOIs	https://doi.org/10.1007/s11664-011-1789-4
State	Published - Dec 2011
Externally published	Yes

Bibliographical note

Funding Information:
We acknowledge Advanced Instrumentation Research Facility of JNU for providing experimental facilities for this work. G.C.T. and T.S.T. also acknowledge the Council of Scientific and Industrial Research (CSIR), India for financial support.

Keywords

Thermoelectric materials
electrical and thermal conduction in crystalline metals and alloys
magnetic polarons
transition-metal compounds

Access to Document

10.1007/s11664-011-1789-4

Cite this

@article{cbbb1f5f3428491a8a4fc7e0bce14b8d,

title = "Increase in the thermoelectric efficiency of the disordered phase of layered antiferromagnetic CuCrS 2 ",

abstract = "The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.",

keywords = "Thermoelectric materials, electrical and thermal conduction in crystalline metals and alloys, magnetic polarons, transition-metal compounds",

author = "Tewari, {Girish C.} and Tripathi, {T. S.} and P. Kumar and Rastogi, {A. K.} and Pasha, {S. K.} and Govind Gupta",

note = "Funding Information: We acknowledge Advanced Instrumentation Research Facility of JNU for providing experimental facilities for this work. G.C.T. and T.S.T. also acknowledge the Council of Scientific and Industrial Research (CSIR), India for financial support.",

year = "2011",

month = dec,

doi = "10.1007/s11664-011-1789-4",

language = "אנגלית",

volume = "40",

pages = "2368--2373",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}

TY - JOUR

T1 - Increase in the thermoelectric efficiency of the disordered phase of layered antiferromagnetic CuCrS 2

AU - Tewari, Girish C.

AU - Tripathi, T. S.

AU - Kumar, P.

AU - Rastogi, A. K.

AU - Pasha, S. K.

AU - Gupta, Govind

N1 - Funding Information: We acknowledge Advanced Instrumentation Research Facility of JNU for providing experimental facilities for this work. G.C.T. and T.S.T. also acknowledge the Council of Scientific and Industrial Research (CSIR), India for financial support.

PY - 2011/12

Y1 - 2011/12

N2 - The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.

AB - The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.

KW - Thermoelectric materials

KW - electrical and thermal conduction in crystalline metals and alloys

KW - magnetic polarons

KW - transition-metal compounds

UR - http://www.scopus.com/inward/record.url?scp=82955163204&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1789-4

DO - 10.1007/s11664-011-1789-4

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:82955163204

SN - 0361-5235

VL - 40

SP - 2368

EP - 2373

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -