Keyphrases
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
InAsSb
100%
Bariode
100%
Diode
33%
Low Dark Current
33%
Tunneling Mechanism
33%
Narrow Gap
33%
Trap-assisted Tunneling
33%
Heterostructure
16%
Band Gap
16%
PIN Photodiode
16%
Dark Current
16%
High Density
16%
Leakage Current
16%
Optical Performance
16%
High Temperature Operation
16%
Depletion Layer
16%
Dislocation Density
16%
Active Layer
16%
Lattice Matching
16%
GaSb
16%
Electro-optical Characteristics
16%
Focal Plane Array Detector
16%
Barrier Detectors
16%
Equivalent Structure
16%
Dark Current Density
16%
Infrared Detector Arrays
16%
Generation-recombination
16%
Mid-infrared Detector
16%
Lattice-matched Substrates
16%
GaSb Substrate
16%
Earth and Planetary Sciences
Energy Gaps (Solid State)
100%
Dark Current
100%
Molecular Beam Epitaxy
100%
Current Density
33%
Photodiode
33%
Active Layer
33%
Heterojunctions
33%
Operating Temperature
33%
Infrared Detector
33%
Focal Plane Device
33%
Engineering
Gallium Arsenide
100%
Detector Array
66%
Tunnel Construction
66%
Optical Performance
33%
Depletion Layer
33%
Focal Plane
33%
High Operating Temperature
33%
Photodiode
33%
Heterojunctions
33%
Active Layer
33%
Temperature Application
33%
Physics
Molecular Beam Epitaxy
100%
Energy Gaps (Solid State)
100%
Dark Current
100%
Focal Plane Device
33%
Infrared Detector
33%
Operating Temperature
33%
Photodiode
33%
Heterojunctions
33%