Abstract
Thin Y2O3 films were prepared at moderate substrate temperature using ultraviolet-assisted pulsed laser deposition (PLD). Highly textured oriented Y2O3 layers, whose crystalline quality is similar to that usually obtained by conventional PLD at temperatures in excess of 600 °C, have been grown on Si substrates under an oxygen pressure of 9×10-2 Torr at only 405 °C. Spectroscopic ellipsometry showed that the refractive index values of these layers to be similar to reference handbook values. X ray photoelectron spectroscopy showed that the UV-grown films exhibited a significantly smaller proportion of physisorbed oxygen than those grown under optimum conditions but without UV irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 446-447 |
| Number of pages | 2 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 2 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1999 |
| Externally published | Yes |
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