In situ ultraviolet-assisted pulsed laser deposition of Y2O3 thin films

V. Craciun, R. K. Singh

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Thin Y2O3 films were prepared at moderate substrate temperature using ultraviolet-assisted pulsed laser deposition (PLD). Highly textured oriented Y2O3 layers, whose crystalline quality is similar to that usually obtained by conventional PLD at temperatures in excess of 600 °C, have been grown on Si substrates under an oxygen pressure of 9×10-2 Torr at only 405 °C. Spectroscopic ellipsometry showed that the refractive index values of these layers to be similar to reference handbook values. X ray photoelectron spectroscopy showed that the UV-grown films exhibited a significantly smaller proportion of physisorbed oxygen than those grown under optimum conditions but without UV irradiation.

Original languageEnglish
Pages (from-to)446-447
Number of pages2
JournalElectrochemical and Solid-State Letters
Volume2
Issue number9
DOIs
StatePublished - Sep 1999
Externally publishedYes

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