In-Situ Growth of Urchin Manganese Sulfide Anchored Three-Dimensional Graphene (γ-MnS@3DG) on Carbon Cloth as a Flexible Asymmetric Supercapacitor

Sushil Kumar, Sk Riyajuddin, Mohd Afshan, SK Tarik Aziz, Takahiro Maruyama, Kaushik Ghosh

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

In energy storage-device it is highly crucial to develop durable electrode materials having high specific capacitance and superior energy density without disturbing its inherent flexibility. Herein, we demonstrate three-dimensional graphene oxide decorated monodispersed hollow urchin γ-MnS (γ-MnS@3DG) via proficient one-step solvothermal method. The designed material delivers a remarkable capacitance of 858 F g-1at 1 A g-1. A flexible solid state asymmetric supercapacitor (ASCs) device assembled using surface activated carbon cloth (CC) decorated with γ-MnS@3DG as positive and three-dimension graphene on carbon cloth (3DG@CC) as negative electrode, (γ-MnS@3DG//3DG). The device delivers 26 Wh kg-1energy density at power density 500 W kg-1@ 1A g-1and retains favorable energy density 17.8 Wh kg-1at an ultrahigh power density of 1500 W kg-1@3 A g-1. This carbon embedded transition-metal sulfide (TMS) based ASC demonstrates eminent mechanical flexibility under rigorous bending states maintaining invariant performance.

Original languageEnglish
Pages (from-to)6574-6581
Number of pages8
JournalJournal of Physical Chemistry Letters
Volume12
Issue number28
DOIs
StatePublished - 22 Jul 2021
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021 American Chemical Society.

Funding

This work is financially supported by the grant of Nanomission, Department of Science & Technology, India (Grant No: SR/NM/NS-91/2016) and the Institute of Nanoscience & Technology start-up grant. All the authors are thankful to Mr. Shyam Sundar Yadav from IISER Mohali for FESEM imaging.

FundersFunder number
Institute of Nanoscience & Technology
Department of Science and Technology, Ministry of Science and Technology, IndiaSR/NM/NS-91/2016

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