In-situ current-voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation

A. T. Sharma; Shahnawaz; Sandeep Kumar; Y. S. Katharria; P. Kumar; D. Kanjilal

doi:10.1016/j.surfcoat.2009.02.091

In-situ current-voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation

A. T. Sharma, Shahnawaz, Sandeep Kumar, Y. S. Katharria, P. Kumar, D. Kanjilal

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The effect of irradiation by 650 keV ¹⁴N⁵⁺ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current-voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 ± 0.01 eV for an un-irradiated diode and remains practically unchanged (0.54 ± 0.01 eV) at the highest ion irradiation fluence of 1 × 10¹⁴ ions cm^{- 2}. The ideality factor is found as 2.5 for the as-prepared diode and increases to 3.1 at the highest ion irradiation fluence. The results are discussed with reference to the energy loss mechanism of a swift heavy ion as it passes through the metal-semiconductor interface.

Original language	English
Pages (from-to)	2667-2669
Number of pages	3
Journal	Surface and Coatings Technology
Volume	203
Issue number	17-18
DOIs	https://doi.org/10.1016/j.surfcoat.2009.02.091
State	Published - 15 Jun 2009
Externally published	Yes

Keywords

Ideality factor
In-situ I-V
Ion irradiation
Schottky barrier height
Schottky diode

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10.1016/j.surfcoat.2009.02.091

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title = "In-situ current-voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation",

abstract = "The effect of irradiation by 650 keV 14N5+ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current-voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 ± 0.01 eV for an un-irradiated diode and remains practically unchanged (0.54 ± 0.01 eV) at the highest ion irradiation fluence of 1 × 1014 ions cm- 2. The ideality factor is found as 2.5 for the as-prepared diode and increases to 3.1 at the highest ion irradiation fluence. The results are discussed with reference to the energy loss mechanism of a swift heavy ion as it passes through the metal-semiconductor interface.",

keywords = "Ideality factor, In-situ I-V, Ion irradiation, Schottky barrier height, Schottky diode",

author = "Sharma, {A. T.} and Shahnawaz and Sandeep Kumar and Katharria, {Y. S.} and P. Kumar and D. Kanjilal",

year = "2009",

month = jun,

day = "15",

doi = "10.1016/j.surfcoat.2009.02.091",

language = "אנגלית",

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pages = "2667--2669",

journal = "Surface and Coatings Technology",

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publisher = "Elsevier B.V.",

number = "17-18",

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TY - JOUR

T1 - In-situ current-voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation

AU - Sharma, A. T.

AU - Shahnawaz,

AU - Kumar, Sandeep

AU - Katharria, Y. S.

AU - Kumar, P.

AU - Kanjilal, D.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - The effect of irradiation by 650 keV 14N5+ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current-voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 ± 0.01 eV for an un-irradiated diode and remains practically unchanged (0.54 ± 0.01 eV) at the highest ion irradiation fluence of 1 × 1014 ions cm- 2. The ideality factor is found as 2.5 for the as-prepared diode and increases to 3.1 at the highest ion irradiation fluence. The results are discussed with reference to the energy loss mechanism of a swift heavy ion as it passes through the metal-semiconductor interface.

AB - The effect of irradiation by 650 keV 14N5+ ions on the electrical characteristics of a Au/GaAs Schottky diode is analyzed with an in-situ current-voltage characterization technique. The Schottky barrier height (SBH) is found to be 0.55 ± 0.01 eV for an un-irradiated diode and remains practically unchanged (0.54 ± 0.01 eV) at the highest ion irradiation fluence of 1 × 1014 ions cm- 2. The ideality factor is found as 2.5 for the as-prepared diode and increases to 3.1 at the highest ion irradiation fluence. The results are discussed with reference to the energy loss mechanism of a swift heavy ion as it passes through the metal-semiconductor interface.

KW - Ideality factor

KW - In-situ I-V

KW - Ion irradiation

KW - Schottky barrier height

KW - Schottky diode

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DO - 10.1016/j.surfcoat.2009.02.091

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AN - SCOPUS:67349177489

SN - 0257-8972

VL - 203

SP - 2667

EP - 2669

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 17-18

ER -

In-situ current-voltage analysis of Au/GaAs Schottky diode under nitrogen ion irradiation

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Keywords

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