In situ characterisation of MOVPE by surface photoabsorption II. Interface monitoring

P. C. Klipstein; S. G. Lyapin; N. J. Mason; P. J. Walker

doi:10.1016/S0022-0248(98)00693-9

In situ characterisation of MOVPE by surface photoabsorption II. Interface monitoring

P. C. Klipstein, S. G. Lyapin, N. J. Mason, P. J. Walker

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Surface photoabsorption (SPA) is an in situ technique for monitoring III-V semiconductors in an MOVPE reactor. When used in conjunction with UV absorption, it gives information about the strain associated with the growth of ideal (one monolayer) and nonideal (more than one monolayer) GaAs interfaces in InAs/GaSb superlattices. Raman scattering has been used as an ex situ technique for quantifying the strain in these superlattices. It is found that the LO frequency blue shifts by 3 cm^-1 when nonideal interfaces are grown.

Original language	English
Pages (from-to)	168-173
Number of pages	6
Journal	Journal of Crystal Growth
Volume	195
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(98)00693-9
State	Published - 15 Dec 1998
Externally published	Yes

Keywords

III-V
Interfaces
MOVPE
Optical monitoring
Raman scattering
Superlattices
Surface photoabsorption
UV absorption

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10.1016/S0022-0248(98)00693-9

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title = "In situ characterisation of MOVPE by surface photoabsorption II. Interface monitoring",

abstract = "Surface photoabsorption (SPA) is an in situ technique for monitoring III-V semiconductors in an MOVPE reactor. When used in conjunction with UV absorption, it gives information about the strain associated with the growth of ideal (one monolayer) and nonideal (more than one monolayer) GaAs interfaces in InAs/GaSb superlattices. Raman scattering has been used as an ex situ technique for quantifying the strain in these superlattices. It is found that the LO frequency blue shifts by 3 cm-1 when nonideal interfaces are grown.",

keywords = "III-V, Interfaces, MOVPE, Optical monitoring, Raman scattering, Superlattices, Surface photoabsorption, UV absorption",

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AU - Klipstein, P. C.

AU - Lyapin, S. G.

AU - Mason, N. J.

AU - Walker, P. J.

PY - 1998/12/15

Y1 - 1998/12/15

N2 - Surface photoabsorption (SPA) is an in situ technique for monitoring III-V semiconductors in an MOVPE reactor. When used in conjunction with UV absorption, it gives information about the strain associated with the growth of ideal (one monolayer) and nonideal (more than one monolayer) GaAs interfaces in InAs/GaSb superlattices. Raman scattering has been used as an ex situ technique for quantifying the strain in these superlattices. It is found that the LO frequency blue shifts by 3 cm-1 when nonideal interfaces are grown.

AB - Surface photoabsorption (SPA) is an in situ technique for monitoring III-V semiconductors in an MOVPE reactor. When used in conjunction with UV absorption, it gives information about the strain associated with the growth of ideal (one monolayer) and nonideal (more than one monolayer) GaAs interfaces in InAs/GaSb superlattices. Raman scattering has been used as an ex situ technique for quantifying the strain in these superlattices. It is found that the LO frequency blue shifts by 3 cm-1 when nonideal interfaces are grown.

KW - III-V

KW - Interfaces

KW - MOVPE

KW - Optical monitoring

KW - Raman scattering

KW - Superlattices

KW - Surface photoabsorption

KW - UV absorption

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In situ characterisation of MOVPE by surface photoabsorption II. Interface monitoring

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