In-depth investigation into defect-induced Raman lines in irradiated graphene

Keyphrases

• Activation Model 33%
• Bilayer Graphene 33%
• Defect Density 33%
• Defect Engineering 33%
• Defect Engineering Strategy 33%
• Defect Parameters 33%
• Defect-induced 100%
• Diverse Applications 33%
• Double Vacancy 33%
• Electronic Sensing 33%
• Energy Storage System 33%
• Graphene 33%
• Graphene Film 33%
• Graphene Properties 33%
• Intensity Ratio 33%
• Ion Irradiation 33%
• Irradiated Graphene 100%
• Local Activation 33%
• Optoelectronic Properties 33%
• Phonon Lifetime 33%
• Phonons 33%
• Physical-chemical Properties 33%
• Radiation Defects 33%
• Raman Lines 100%
• Raman Scattering 33%
• Sensing Device 33%
• Sensing Energy 33%
• Structural Defects 33%
• Tensile Stress 33%
• Vacancy Defects 33%
• Valuable Insight 33%

Engineering

• Broadening 20%
• Defect Density 20%
• Defects 100%
• Energy Storage System 20%
• Engineering 20%
• Engineering Strategy 20%
• Graphene 100%
• Induced Defect 100%
• Monolayer 20%
• Optoelectronics 20%
• Sensing Device 20%
• Structural Defect 20%
• Tensile Stress σ 20%

Material Science

• Defect Density 20%
• Film 20%
• Gallium Ion 20%
• Graphene 100%
• Monolayers 20%
• Ultimate Tensile Strength 20%