Improvement of Cu(GA,In)Se2 based solar cells by etching the absorber

R. Klenk, R. Menner, D. Cahen, H. W. Schock

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations

Abstract

The performance of the high-bandgap Cu(Ga,In)Se2-based solar cells is still limited by moderate fill factors and short-circuit currents due to incomplete carrier collection. A high recombination velocity at grain surfaces may be responsible for this behavior. In order to improve the performance, etching and passivating treatments with Br2-MeOH and KCN have been performed on Ga-rich absorbers, significantly increasing the fill factor and short-circuit current density. Fill factors of up to 56% were achieved for CuGaSe2/(Zn,Cd)S. The influence of the treatments on the absorber films was analyzed by various means. EDS analysis, scanning electron micrographs, and electrical measurements of conductivity and carrier density prove the removal of Cu2-xSe by KCN dip from Cu-rich films. In stoichiometric or Cu-poor films, no change can be seen by these methods.

Original languageEnglish
Pages (from-to)481-486
Number of pages6
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume1
StatePublished - May 1990
Externally publishedYes
EventTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA
Duration: 21 May 199025 May 1990

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