Improvement of Cu(GA,In)Se2 based solar cells by etching the absorber

R. Klenk; R. Menner; D. Cahen; H. W. Schock

Improvement of Cu(GA,In)Se₂ based solar cells by etching the absorber

R. Klenk, R. Menner, D. Cahen, H. W. Schock

University of Stuttgart

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

The performance of the high-bandgap Cu(Ga,In)Se₂-based solar cells is still limited by moderate fill factors and short-circuit currents due to incomplete carrier collection. A high recombination velocity at grain surfaces may be responsible for this behavior. In order to improve the performance, etching and passivating treatments with Br₂-MeOH and KCN have been performed on Ga-rich absorbers, significantly increasing the fill factor and short-circuit current density. Fill factors of up to 56% were achieved for CuGaSe₂/(Zn,Cd)S. The influence of the treatments on the absorber films was analyzed by various means. EDS analysis, scanning electron micrographs, and electrical measurements of conductivity and carrier density prove the removal of Cu_2-xSe by KCN dip from Cu-rich films. In stoichiometric or Cu-poor films, no change can be seen by these methods.

Original language	English
Pages (from-to)	481-486
Number of pages	6
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	1
State	Published - May 1990
Externally published	Yes
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990

Cite this

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title = "Improvement of Cu(GA,In)Se2 based solar cells by etching the absorber",

abstract = "The performance of the high-bandgap Cu(Ga,In)Se2-based solar cells is still limited by moderate fill factors and short-circuit currents due to incomplete carrier collection. A high recombination velocity at grain surfaces may be responsible for this behavior. In order to improve the performance, etching and passivating treatments with Br2-MeOH and KCN have been performed on Ga-rich absorbers, significantly increasing the fill factor and short-circuit current density. Fill factors of up to 56% were achieved for CuGaSe2/(Zn,Cd)S. The influence of the treatments on the absorber films was analyzed by various means. EDS analysis, scanning electron micrographs, and electrical measurements of conductivity and carrier density prove the removal of Cu2-xSe by KCN dip from Cu-rich films. In stoichiometric or Cu-poor films, no change can be seen by these methods.",

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T1 - Improvement of Cu(GA,In)Se2 based solar cells by etching the absorber

AU - Klenk, R.

AU - Menner, R.

AU - Cahen, D.

AU - Schock, H. W.

PY - 1990/5

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N2 - The performance of the high-bandgap Cu(Ga,In)Se2-based solar cells is still limited by moderate fill factors and short-circuit currents due to incomplete carrier collection. A high recombination velocity at grain surfaces may be responsible for this behavior. In order to improve the performance, etching and passivating treatments with Br2-MeOH and KCN have been performed on Ga-rich absorbers, significantly increasing the fill factor and short-circuit current density. Fill factors of up to 56% were achieved for CuGaSe2/(Zn,Cd)S. The influence of the treatments on the absorber films was analyzed by various means. EDS analysis, scanning electron micrographs, and electrical measurements of conductivity and carrier density prove the removal of Cu2-xSe by KCN dip from Cu-rich films. In stoichiometric or Cu-poor films, no change can be seen by these methods.

AB - The performance of the high-bandgap Cu(Ga,In)Se2-based solar cells is still limited by moderate fill factors and short-circuit currents due to incomplete carrier collection. A high recombination velocity at grain surfaces may be responsible for this behavior. In order to improve the performance, etching and passivating treatments with Br2-MeOH and KCN have been performed on Ga-rich absorbers, significantly increasing the fill factor and short-circuit current density. Fill factors of up to 56% were achieved for CuGaSe2/(Zn,Cd)S. The influence of the treatments on the absorber films was analyzed by various means. EDS analysis, scanning electron micrographs, and electrical measurements of conductivity and carrier density prove the removal of Cu2-xSe by KCN dip from Cu-rich films. In stoichiometric or Cu-poor films, no change can be seen by these methods.

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JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

Improvement of Cu(GA,In)Se₂ based solar cells by etching the absorber

Abstract

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