Improvement in electrical and dielectric behavior of thin films by Ag doping

Anuranjan Srivastava, D. Kumar, Rajiv K. Singh, Harish Venkataraman, William R. Eisenstadt

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


In this paper, we report the fabrication and characterization of (Formula presented) capacitors. All the films, including the top (silver) and bottom (Formula presented) electrodes, were deposited using a pulsed laser deposition technique. The electrical and dielectric properties of (Formula presented) capacitors were found to improve significantly by means of silver doping. For example, the leakage current density of a Ag/Ag-doped (Formula presented)capacitor was about an order of magnitude lower and the dielectric constant was ∼40% higher than that of a (Formula presented)capacitor over a range of biases. The improvement in the electrical properties of (Formula presented) films is believed to be caused by a double role of silver. The first one is associated with the reduced oxygen vacancies due to improved oxygenation of BST films in the presence of silver, and the second one is associated with the unpinning effect of domain walls again in the presence of silver.

Original languageEnglish
Pages (from-to)7305-7307
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - 2000
Externally publishedYes


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