Improved luminescence properties of pulsed laser deposited Eu:Y2O3thin films on diamond coated silicon substrates

K. G. Cho; D. Kumar; D. G. Lee; S. L. Jones; P. H. Holloway; R. K. Singh

doi:10.1063/1.120329

Improved luminescence properties of pulsed laser deposited Eu:Y₂O₃thin films on diamond coated silicon substrates

K. G. Cho, D. Kumar, D. G. Lee, S. L. Jones, P. H. Holloway, R. K. Singh

University of Florida

Research output: Contribution to journal › Article › peer-review

118 Scopus citations

Abstract

Europium activated yttrium oxide (Eu:Y₂O₃) phosphor films have been grown in situ on (100) bare and diamond-coated silicon substrates using a pulsed laser deposition technique. Diamond-coated silicon substrates were prepared using hot filament chemical vapor deposition of diamond onto silicon. Photoluminescence brightness from Eu:Y₂O₃ films grown at 700°C on diamond-coated silicon substrates was about twice that of films on bare silicon, and reached 80% of the brightness of powders. The higher brightness from Eu:Y₂O₃ film on diamond-coated silicon substrates is attributed to reduced internal reflections from the Eu:Y₂O₃ film surface, which results from the roughness of the diamond layer.

Original language	English
Pages (from-to)	3335-3337
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	23
DOIs	https://doi.org/10.1063/1.120329
State	Published - 8 Dec 1997
Externally published	Yes

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abstract = "Europium activated yttrium oxide (Eu:Y2O3) phosphor films have been grown in situ on (100) bare and diamond-coated silicon substrates using a pulsed laser deposition technique. Diamond-coated silicon substrates were prepared using hot filament chemical vapor deposition of diamond onto silicon. Photoluminescence brightness from Eu:Y2O3 films grown at 700°C on diamond-coated silicon substrates was about twice that of films on bare silicon, and reached 80% of the brightness of powders. The higher brightness from Eu:Y2O3 film on diamond-coated silicon substrates is attributed to reduced internal reflections from the Eu:Y2O3 film surface, which results from the roughness of the diamond layer.",

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AU - Cho, K. G.

AU - Kumar, D.

AU - Lee, D. G.

AU - Jones, S. L.

AU - Holloway, P. H.

AU - Singh, R. K.

PY - 1997/12/8

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N2 - Europium activated yttrium oxide (Eu:Y2O3) phosphor films have been grown in situ on (100) bare and diamond-coated silicon substrates using a pulsed laser deposition technique. Diamond-coated silicon substrates were prepared using hot filament chemical vapor deposition of diamond onto silicon. Photoluminescence brightness from Eu:Y2O3 films grown at 700°C on diamond-coated silicon substrates was about twice that of films on bare silicon, and reached 80% of the brightness of powders. The higher brightness from Eu:Y2O3 film on diamond-coated silicon substrates is attributed to reduced internal reflections from the Eu:Y2O3 film surface, which results from the roughness of the diamond layer.

AB - Europium activated yttrium oxide (Eu:Y2O3) phosphor films have been grown in situ on (100) bare and diamond-coated silicon substrates using a pulsed laser deposition technique. Diamond-coated silicon substrates were prepared using hot filament chemical vapor deposition of diamond onto silicon. Photoluminescence brightness from Eu:Y2O3 films grown at 700°C on diamond-coated silicon substrates was about twice that of films on bare silicon, and reached 80% of the brightness of powders. The higher brightness from Eu:Y2O3 film on diamond-coated silicon substrates is attributed to reduced internal reflections from the Eu:Y2O3 film surface, which results from the roughness of the diamond layer.

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Improved luminescence properties of pulsed laser deposited Eu:Y₂O₃thin films on diamond coated silicon substrates

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