Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing

Arul Chakkaravarthi Arjunan, Deepika Singh, H. T. Wang, F. Ren, Purushottam Kumar, R. K. Singh, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Chemical mechanical polishing of free-standing GaN substrates is found to reduce the reverse leakage current of Ni/Au Schottky diodes fabricated on the Ga-face. The barrier height extracted from current-voltage measurements is found to increase from ∼0.4 eV on un-treated substrates to 0.75 eV on polished wafers, along with a reduction in diode ideality factor from 2 to 1.5. The electrical measurements are consistent with removal of a defective near-surface region that promotes generation-recombination current. More acidic polishing solutions were found to produce the best Schottky diode characteristics and there was an optimum loading force during CMP of the GaN surface.

Original languageEnglish
Pages (from-to)3085-3089
Number of pages5
JournalApplied Surface Science
Volume255
Issue number5 PART 2
DOIs
StatePublished - 30 Dec 2008
Externally publishedYes

Keywords

  • Al O
  • GaN

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